Product Summary
V
(BR)DSS
R
DS(on)MAX
I
D
20V
500mΩ@4.5V
0.75A
700mΩ@2.5V
900mΩ@1.8V
Feature
Lead Free Product is Acquired
Surface Mount Package
N-Channel Switch with Low R
DS(on)
Operated at Low Logic Level Gate Drive
Application
Load/Power Switching
Interfacing Switching
Battery Management for Ultra Small Portable Electronics
Logic Level Shift
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
±12
V
Continuous Drain Current
(1)
I
D
0.75
A
Pulsed Drain Current(tp=10μs)
I
DM
1.8
A
Power Dissipation
(1)
P
D
100
mW
Thermal Resistance from Junction to Ambient
(1)
R
θJA
1250
℃/W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55~ +150
℃
Lead Temperature for Soldering Purposes(1/8” from case for 10s)
T
L
260
℃
N-Channel MOSFET
SM20N07
Schematic & PIN Configuration
34
ESD Protected
SSG Semiconductor
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DFN1006-3L
Equivalent Circuit
Top View
Internal Schematic
Bottom View
D
S
G
D
S
G
Ga
te Protection
Diode
MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
= 0V, I
D
=250µA
20
V
Zero gate voltage drain current
I
DSS
V
DS
=20V,V
GS
= 0V
1
µA
Gate-body leakage current
I
GSS
V
GS
=±10V, V
DS
= 0V
±20
µA
Gate threshold voltage
(2)
V
GS(th)
V
DS
=V
GS
, I
D
=250µA
0.35
0.75
1.1
V
Drain-source on-resistance
(2)
R
DS(on)
V
GS
=4.5V, I
D
=150mA
250
500
mΩ
V
GS
=2.5V, I
D
=150mA
300
700
V
GS
=1.8V, I
D
=150mA
370
900
V
GS
=1.5V, I
D
=20mA
460
V
GS
=1.2V, I
D
=10mA
1200
Forward tranconductance
g
FS
V
DS
=10V, I
D
=150mA
150
mS
Dynamic characteristics
(4)
Input Capacitance
C
iss
V
DS
=16V,V
GS
=0V,f=1MHz
79
120
pF
Output Capacitance
C
oss
13
20
Reverse Transfer Capacitance
C
rss
9
15
Switching Characteristics
(4)
Turn-on delay time
(3)
t
d(on)
V
DS
=10V,I
D
=500mA,
V
GS
=4.5V,R
G
=10Ω
6.7
ns
Turn-on rise time
(3)
t
r
4.8
Turn-off delay time
(3)
t
d(off)
17.3
Turn-off fall time
(3)
t
f
7.4
Source-Drain Diode characteristics
Diode Forward voltage
(3)
V
DS
I
S
=0.15A, V
GS
= 0V
1.2
V
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
N-Channel MOSFET
SM20N07
SSG Semiconductor
www.ssgsemi.com
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