2
1
3
MMBD
914
Switching Diode
Feature
s
z Fast Switching Speed
z For General Purpose Switching Applications
z
High Conductance
Absolute Maximum Ratings
(T
A
=25°C unless other
wise s
pecified)
Electrical Characteristics (T
A
=25°C unless otherwise specified)
1/3
Parameter Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
1000
A
verage Rectified
Output
Current
I
O
300 mA
I
FSM
2
A
Power Dissipation
P
D
350 mW
Thermal Resistance Junction to Ambient
R
θJA
357 ℃/W
Junction Temperature T
J
150 ℃
Storage Temperature
T
STG
℃
Non-Repetitive Peak
Forward Surge Current
@8.3ms
Parameter
Symbol
Min
Max Unit Conditions
Reverse Breakdown Voltage
V
(BR)
100
V I
R
=100μA
V
F1
715
mVmV
F
=1
mA
V
F2
855
mVmV
F
=10mA
V
F3
1000
mVmV
F
=50mA
Forward Voltage
V
F4
125
0
mVmV
F
=
150mA
I
R1
1
uAuA
R
=75V
Reverse Current
I
R2
25
nAnA
R
=20V
Diode Capacitance
C
D
2
pF V
R
=0,f=1MHz
Reverse Recovery Time
t
rr
4
ns
I
F
=I
R
=10mA,
I
rr
=0.1*I
R
-55 to +150
SOT-23
Schematic Diagram
Typical Characteristics Curves
2/3
MMBD914
Switching Diode
0 25 50 75 100 125 150
0
100
200
300
400
0.0
0.4 0.8 1.2 1.6
0.1
1
10
100
0
02 06
1
10
100
1000
0 5 15 20
1.0
1.1
1.2
1.3
1.4
Power Derating Curve
POWER DISSIPATION P
D
(mW)
AMBIENT TEMPERATURE Ta (
℃
)
300
30
3
0.3
T
a
=
1
0
0
℃
T
a
=
2
5
℃
FORWARD CURRENT I
F
(mA)
FORWARD VOLTAGE V
F
(V)
300
30
3
Ta=100
℃
Ta=25
℃
REVERSE CURRENT I
R
(nA)
04
REVERSE VOLTAGE V
R
(V)
Forward Characteristics
Reverse Characteristics
Ta=25
℃
f=1MHz
C
apacitance Characteristics
10
REVERSE VOLTAGE V
R
(V)
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
80