600VN-ChannelMOSFET
GENERALDESCRIPTION
ThisPowerMOSFETisproducedusing
advancedplanarstripe,DMOS
technology.Thislatesttechnologyhasbeen
especiallydesignedtominimizeon-state
resistance,haveahighruggedavalanche
characteristics,suchasfastswitching
time,lowonresistance.lowgatechargeand
especiallyexcellentavalanchecharacteristics.
ThispowerMOSFETisusuallyusedatAC
adaptors,onthebatterychargerandSMPS
Features
•4.5A,600V,RDS(on)=2.5Ω@VGS=10VOrderingInformation
•Lowgatecharge(typical17nC)
•Fastswitching
•100%avalanchetested
•Improveddv/dtcapability
V
DSSRDS(ON)ID
600V2.5Ω4.5A
PARTNUMBERPACKAGEBRAND
TO-220/220F0GFD
5N60/5N60F
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5N60/5N60F
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Absolute
Absolute
Absolute
AbsoluteMaximum
Maximum
Maximum
MaximumRating
Rating
Rating
Ratings
s
s
s
TC=25°Cunlessotherwisenoted
SymbolParameter5N605N60FUnits
VDSS
Drain-SourceVoltage600V
ID
DrainCurrent-Continuous(TC=25°C)
-Continuous(TC=100°C)
4.54.5A
2.72.7A
IDM
DrainCurrent-Pulsed(Note1)1818A
VGSS
Gate-SourceVoltage±30V
EAS
SinglePulsedAvalancheEnergy(Note2)280mJ
EAR
RepetitiveAvalancheEnergy(Note1)13mJ
dv/dtPeakDiodeRecoverydv/dt(Note3)4.5V/ns
PD
PowerDissipation(TC=25°C)
12045W
Derateabove25°C
0.80.5W/°C
TJ,TSTG
OperatingandStorageTemperatureRange-55to+150°C
TL
Maximumleadtemperatureforsoldering
purposes,
1/8"fromcasefor5seconds
300°C
Thermal
Thermal
Thermal
ThermalCharacteristics
Characteristics
Characteristics
Characteristics
SymbolParameter5N605N60FUnits
RθJCThermalResistance,Junction-to-Case1.253.79°C/W
RθCS
ThermalResistance,Case-to-SinkTyp.0.50.5°C/W
RθJA
ThermalResistance,Junction-to-Ambient62.562.5°C/W
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5N60/5N60F
GOFORD