GT100N12
GOFORD
www.gofordsemi.com TEL：0755- FAX:0755-29961466
Description
The GT100N12 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
⚫ V
DS
120V
⚫ I
D
(at V
GS
= 10V) 70A
⚫ R
DS(ON)
(at V
GS
= 10V) < 10mΩ
⚫ 100% Avalanche Tested
⚫ RoHS Compliant
Application
⚫ Synchronous Rectification in SMPS or LED Driver
⚫ UPS
⚫ Motor Control
⚫ BMS
⚫ High Frequency Circuit
Device Package
Marking
Packaging
GT100N12T TO-220 GT100N12 50pcs/Tube
GT100N12M TO-263 GT100N12
800pcs/Reel
Absolute Maximum Ratings T
C
= 25ºC, unless otherwise noted
Parameter Symbol Value Unit
Drain-Source Voltage V
DS
120 V
Continuous Drain Current I
D
70 A
Pulsed Drain Current (note1) I
DM
280 A
Gate-Source Voltage V
GS
±20
V
Power Dissipation P
D
120 W
Single pulse avalanche energy （note3）
E
AS
352 mJ
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 To 150 ºC
Thermal Resistance
Parameter Symbol Value Unit
Thermal Resistance, Junction-to-Case R
thJC
1.25
ºC /W
N-Channel Enhancement Mode Power MOSFET
Schematic Diagram
TO-263
TO-220
29961263
GT100N12
GOFORD
www.gofordsemi.com TEL：0755- FAX:0755-29961466
Specifications T
J
= 25ºC , unless otherwise noted
Parameter Symbol Test Conditions
Value
Unit
Min. Typ. Max.
Static Parameters
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0V, I
D
= 250µA 120 -- -- V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 120V, V
GS
= 0V -- -- 1 μA
Gate-Source Leakage I
GSS
V
GS
= ±20V
-- --
±100
nA
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.5 3 3.5 V
Drain-Source On-Resistance R
DS(on)
V
GS
= 10V, I
D
= 35A -- 8 10 mΩ
Forward Transconductance
g
FS
VDS=5V,ID=35A -- 60 -- S
Dynamic Parameters
Input Capacitance C
iss
V
GS
= 0V,
V
DS
= 60V,
f = 1.0MHz
-- 3050 --
pFOutput Capacitance C
oss
-- 280 --
Reverse Transfer Capacitance C
rss
-- 22 --
Total Gate Charge Q
g
V
DS
= 60V,
I
D
= 35A,
V
GS
= 10V
-- 50 --
nCGate-Source Charge Q
gs
-- 17 --
Gate-Drain Charge Q
gd
-- 15 --
Turn-on Delay Time t
d(on)
V
DD
= 60V,
I
D
= 35A,
R
G
= 1.6Ω
-- 15 --
ns
Turn-on Rise Time t
r
-- 10 --
Turn-off Delay Time t
d(off)
-- 34 --
Turn-off Fall Time t
f
-- 8 --
Drain-Source Body Diode Characteristics
Continuous Body Diode Current I
S
T
C
= 25ºC -- -- 70 A
Body Diode Voltage V
SD
T
J
= 25ºC, I
SD
= 25A, V
GS
= 0V -- -- 1.2 V
Reverse Recovery Time trr
I
S
= 35A, V
GS
= 0V
di/dt=100A/us
-- 60 -- ns
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Identical low side and high side switch with identical R
G
3. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω
29961263