General Features
●
Application
G1003B
GOFORD
V
DSS RDS(ON)
135
A
5
10V
@
(Typ)
Ωm
100V
RDS(ON)
4.5V
(Typ)
@
145
Ωm
ID
General Description
The G1003B uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
● High Power and current handing capability
●
● Surface Mount Package
● PWM applications
● Load switch
● Power management
Schematic Diagram
Marking and pin Assignment
SOT-23
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol Parameter Value Unit
VDS
Drain-Source Voltage (VGS=0V）
100 V
VGS Gate-Source Voltage (VDS=0V)
±25
V
I
D
Drain Current-Continuous(T
c
=25℃) 5 A
Drain Current-Continuous(Tc=100℃) 1.8 A
I
DM (pluse) Drain Current-Continuous@ Current-Pulsed
(Note 1)
12 A
P
D
Maximum Power Dissipation 3.3 W
T
J
,T
STG
Operating Junction and Storage Temperature Range -55 To 150
℃
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Table 2. Thermal Characteristic
Symbol
Parameter
Typ Value Unit
RJA
Thermal Resistance, Junction-to-Ambient - 37
℃/W
RoHS Compliant
G1003B
Ordering Information
Part Number
Marking
Packaging
Case
G1003B
SOT-23-3L
3000pcs/Reel
G1003B
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit
On/Off States
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V I
D
=250μA 100 V
I
DSS
Zero Gate Voltage Drain Current V
DS
=100V,V
GS
=0V 100 μA
I
GSS
Gate-Body Leakage Current V
GS
=±20V,V
DS
=0V ±100 nA
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
,I
D
=250μA 1 - 3 V
R
DS(ON)
Drain-Source On-State Resistance
V
GS
=10V, I
D
=-10A 135 170 mΩ
V
GS
=4.5V, I
D
=-5A 145 180 mΩ
Dynamic Characteristics
Ciss
Input Capacitance
V
DS
=25V,V
GS
=0V,
f=1.0MHz
570 pF
C
oss
Output Capacitance 25 pF
C
rss
Reverse Transfer Capacitance 20 pF
Switching Times
t
d(on)
Turn-on Delay Time
V
DD
=15V,I
D
=1A,R
L
=15Ω
V
GS
=10V,R
G
=2.5Ω
2.2 nS
t
r
Turn-on Rise Time 3.9 nS
t
d(off)
Turn-Off Delay Time 5.8 nS
t
f
Turn-Off Fall Time 1.9 nS
Q
g
Total Gate Charge
VDS=15V,ID=10A
VGS=10V
30 nC
Q
gs
Gate-Source Charge 6 nC
Q
gd
Gate-Drain Charge 9 nC
Source-Drain Diode Characteristics
I
SD
Source-Drain Current(Body Diode) 12 A
V
SD
Forward on Voltage
(Note 1)
VGS=0V,IS=2A 0.8 V
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
G1003B
GOFORD
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466