General Features
Application
D
G
S
Schematic diagram
TO-92
G1005
GOFORD
●
V
DSSRDS(ON)
123
A
5
10V
@
(Typ)
Ωm
100V
ID
General Description
The G1005 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
● High Power and current handing capability
●
● Surface Mount Package
● PWM applications
● Load switch
● Power management
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol Parameter Value Unit
VDS
Drain-Source Voltage (VGS=0V）
100 V
VGS Gate-Source Voltage (VDS=0V)
±20
V
I
D
Drain Current-Continuous(T
c
=25℃) 5 A
Drain Current-Continuous(Tc=100℃) 3.1 A
I
DM (pluse) Drain Current-Continuous@ Current-Pulsed
(Note 1)
20 A
P
D
Maximum Power Dissipation 9.3 W
T
J
,T
STG
Operating Junction and Storage Temperature Range -55 To 150
℃
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Table 2. Thermal Characteristic
Symbol
Parameter
Typ Value Unit
RJA
Thermal Resistance, Junction-to-Ambient - 13.5
℃/W
RoHS Compliant
Ordering Information
Part Number
Marking
Packaging
G1005 TO-92
Case
G1005
1000pcs/Carton
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit
On/Off States
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V I
D
=250μA 100 V
I
DSS
Zero Gate Voltage Drain Current V
DS
=100V,V
GS
=0V 0.9 μA
I
GSS
Gate-Body Leakage Current V
GS
=±20V,V
DS
=0V ±100 nA
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
,I
D
=250μA 1.3 1.9 2.5 V
R
DS(ON)
Drain-Source On-State Resistance
V
GS
=10V, I
D
= 3 A
123 180 mΩ
Dynamic Characteristics
Ciss
Input Capacitance
V
DS
=25V,V
GS
=0V,
f=1.0MHz
690 pF
C
oss
Output Capacitance 120 pF
C
rss
Reverse Transfer Capacitance 90 pF
Switching Times
t
d(on)
Turn-on Delay Time
V
DD
=15V,I
D
=1A,R
L
=15Ω
V
GS
=10V,R
G
=2.5Ω
11 nS
t
r
Turn-on Rise Time 7.4 nS
t
d(off)
Turn-Off Delay Time 35 nS
t
f
Turn-Off Fall Time 9.1 nS
Q
g
Total Gate Charge
VDS=15V,ID=5 A
VGS=10V
15.5 nC
Q
gs
Gate-Source Charge 3.2 nC
Q
gd
Gate-Drain Charge 4.7 nC
Source-Drain Diode Characteristics
I
SD
Source-Drain Current(Body Diode) 5 A
V
SD
Forward on Voltage
(Note 1)
VGS=0V,IS=3A 1 V
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
G1005
GOFORD
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466