The XOKB02 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
GENERAL FEATURES
●
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM applications
●Load switch
●Power management
D
G
S
Schematic diagram
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
25 V
Gate-Source Voltage
V
GS
±12 V
Drain Current-Continuous
I
D
5.8 A
Drain Current-Pulsed (Note 1)
I
DM
30 A
Maximum Power Dissipation
P
D
1.4 W
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2) R
θJA
1.0 /W℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 30 33 - V
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Marking and pin assignment
SOT-23-3L
DESCRIPTION
XOKB
V
DSS RDS(ON)
31
A
5.8
4.5V
@
(Typ)
Ωm
25V
RDS(ON)
2.5V
(Typ)
@
45
Ωm
IDRDS(ON)
10V
(Typ)
28
Ωm
XOKB02
GOFORD
02
Zero Gate Voltage Drain Current I
DSS
V
DS
=30V,V
GS
=0V - - 1 μA
Gate-Body Leakage Current I
GSS
V
GS
=±12V,V
DS
=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250μA 0.7 0.9 1.4 V
V
GS
=2.5V, I
D
=4A -
45 5
mΩ
V
GS
=4.5V, I
D
=2.9A -
31 4
mΩ
Drain-Source On-State Resistance R
DS(ON)
V
GS
=10V, I
D
=2.9A -
28 35
mΩ
Forward Transconductance g
FS
V
DS
=5V,I
D
=2.9A 10 - - S
Dynamic Characteristics (Note4)
Input Capacitance C
lss
- 623 - PF
Output Capacitance C
oss
- 99 - PF
Reverse Transfer Capacitance C
rss
V
DS
=15V,V
GS
=0V,
F=1.0MHz
- 77 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time t
d(on)
- 3.3 - nS
Turn-on Rise Time t
r
- 4.8 - nS
Turn-Off Delay Time t
d(off)
- 26 - nS
Turn-Off Fall Time t
f
V
DD
=15V,I
D
=2.9A
V
GS
=10V,R
GEN
=3Ω
- 4 - nS
Total Gate Charge Q
g
- 9.5 - nC
Gate-Source Charge Q
gs
- 1.5 - nC
Gate-Drain Charge Q
gd
V
DS
=15V,I
D
=5.8A,
V
GS
=4.5V
- 3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) V
SD
V
GS
=0V,I
S
=2.9A - 0.75 1.2 V
Diode Forward Current (Note 2) I
S
- - 2.9 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . %
4. Guaranteed by design, not subject to production
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XOKB02
GOFORD