Description
The G30N02 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
General Features
●
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E
AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Load switching
● LED power supply
Schematic diagram
Marking and pin assign men t
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
20 V
Gate-Source Voltage
V
GS
±12 V
Drain Current-Continuous
I
D
30 A
Drain Current-Continuous(T
C
=100℃) I
D
(100℃) 21 A
Pulsed Drain Current
I
DM
75 A
Maximum Power Dissipation
P
D
40 W
Single pulse avalanche energy
(Note 5)
E
AS
150 mJ
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
3.8 /W℃
GOFORD
(VN)
G30N02
●
RoHS Compliant
G30N02
V
DSS
A
30
20V
RDS(ON)
4.5V
(Typ)
@
10.5
Ωm
ID
Ordering Information
Part Number
Marking
Packaging
Case
G30N02K
TO-252
2500pcs/Reel
G30N02
G30N02T
TO-220
50pcs/Tube
G30N02
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 20 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=20V,V
GS
=0V - - 1 μA
Gate-Body Leakage Current I
GSS
V
GS
=±12V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250μA 0.5 0.7 1.2 V
Drain-Source On-State Resistance R
DS(ON)
V
GS
=4.5V, I
D
=20A - 10.5 13 mΩ
Forward Transconductance g
FS
V
DS
=5V,I
D
=20A 10 - - S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
900 PF
Output Capacitance C
oss
162 PF
Reverse Transfer Capacitance C
rss
V
DS
=10V,V
GS
=0V,
F=1.0MHz
105 PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- 4.5 - nS
Turn-on Rise Time t
r
- 9.2 - nS
Turn-Off Delay Time t
d(off)
- 18.7 - nS
Turn-Off Fall Time t
f
VGS=10V,VDS=10V
RL=0. 5
Ω
,RGEN=3
Ω
- 3.3 - nS
Total Gate Charge Q
g
15 nC
Gate-Source Charge Q
gs
1.8 nC
Gate-Drain Charge Q
gd
VGS=10V,VDS=10V,ID=20A
2.8 nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=20A - - 1.2 V
Diode Forward Current
(Note 2)
I
S
- - - 30 A
Reverse Recovery Time
t
rr
- 18 - nS
Reverse Recovery Charge
Qrr
TJ = 25°C, IF = 20A
di/dt = 100A/μs
(Note3)
- 9.5 - nC
Forward Turn-On Time
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,V
DD
=10V,V
G
=10V,L=0.5mH,Rg=25Ω
GOFORD
G30N02
-
-
-
-
-
-
-
-
-
-
-
-
(VN)
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466