P-CHANNEL
MOSFET
Symbol Unit
V
DS
V
V
GS
V
I
D
A
I
DM
A
Gate-Source Volltage ± 8
Continuous Drain Current
Features
• Advanced Trench MOSFET Process Technology
• Ultra Low On-Resistance With Low Gate Charge
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free. “Green” Device (Note 1)
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 357°C/W Junction to Ambient
RatingParameter
Drain-Source Voltage -12
-8
Pulsed Drain Current
(Note 2)
-28
DFN2020-6J
44
4
4
4
(
*
+
,
-
.
0
)
'
1
2
3
4
MIN MAX MIN MAX
A 0.028 0.032 0.700 0.800
B
C 0.000 0.002 0.000 0.050
D 0.076 0.082 1.924 2.076
E 0.076 0.082 1.924 2.076
F 0.031 0.039 0.800 1.000
G 0.033 0.041 0.850 1.050
H 0.008 0.016 0.200 0.400
J 0.008 ----- 0.200 -----
K 0.018 0.026 0.460 0.660
L
M 0.010 0.014 0.250 0.350
N 0.007 0.013 0.174 0.326
DIMENSIONS
DIM
INCHES MM
NOTE
0.008 0.203
0.026 0.650
TYP.
TYP.
Marking: 1208
Internal Structure
D D G
D D S
1 2 3
6 5 4
2. Pulse Width Limited by Maximum Junction Temperature.
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
G1208
GOFORD
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
=0V, I
D
=-250µA
-12 V
Gate-Source Leakage Current
I
GSS
V
DS
=0V, V
GS
=±8V
±100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=-12V, V
GS
=0V
-1 µA
Gate-T
hreshold Voltage
(Note 2)
V
GS(th)
V
DS
=V
GS
, I
D
=-250µA
-0.4 -1 V
V
GS
=-4.5V
, I
D
=-5A
28
V
GS
=-3.7V, I
D
=-4.6A
32
V
GS
=-2.5V, I
D
=-4.3A
40
V
GS
=-1.8V, I
D
=-1A
63
V
GS
=-1.5V, I
D
=-0.5A
150
Forward Tranconductance
(Note 2)
g
FS
V
DS
=-5V, I
D
=-5A
18 S
Input Capacitance
C
iss
1275
Output Capacitance
C
oss
255
Reverse Transfer Capacitance
C
rss
236
Gate Resistance
R
g
V
DS
=0V,V
GS
=0V,f=1MHz
1.9 19 Ω
Total Gate Charge
Q
g
14
21
Gate-Source Charge
Q
gs
2.3
Gate-Drain Charge
Q
gd
3.6
Reverse Recovery Chrage
Q
rr
8
16
Reverse Recovery Time
t
rr
24
48
Turn-On Delay Time
t
d(on)
26
40
Turn-On Rise Time
t
r
24
40
Turn-Off Delay Time
t
d(off)
45
70
Turn-Off Fall Time
t
f
20
35
Continuous Body Diode Current
I
S
-8
Pulsed
Diode Forward Current
I
SM
-28
Body Diode Voltage
V
SD
I
S
=-4A, V
GS
=0V
-1.2 V
Static Characteristics
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Drain-Source On-Resistance
(Note 2)
mΩ
R
DS(on)
Dynamic Characteristics
(Note 3)
V
DS
=-6V,V
GS
=0V,f=1MHz
pF
V
DD
=-6V,V
GEN
=-4.5V,I
D
=-4A
R
L
=6Ω,R
GEN
=1Ω
3. Guaranteed by Design, Not Subject to Production Testing.
V
DS
=-6V,V
GS
=-4.5V,I
D
=-5A
ns
I
F
=-4A, di/dt=100A/µs
Note: 2. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤2%.
Drain-Source Body Diode Characteristics
A
nC
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
G1208
GOFORD