ASC300N1200MEP2B
1
1200V SiC MOSFET Module
Potential Applitions
• High Frequency Switching application
• DC/DC converter
• Motor drives
• Servo drives
• UPS systems
• PV
Package 56.8mm x 62.9mm x 14.9mm
Part Number
Package
Marking
ASC300N120MEP2B
EasyPACK
ASC300N120MEP2B
Absolute Maximum Ratings (TC = 25℃ unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
DS
Drain-Source Voltage
1200
V
V
GS
Gate-Source Voltage
-10
+22
V
I
D
Drain Current(continuous) V GS =20V
300
A
I
DM
Drain Current (pulsed)
600
A
T
C,
Tstg
Operating and Storage Temperature Range
-40
+150
℃
LStray
Stray Inductance
10
nH
Features
• High current density
• Low inductive design
• Low switching losses
�� High-Frequency Operation
• Zero Turn-off Tail Current from MOSFET
• Normally-off, Fail-safe Device Operation
• Ease of Paralleling
• Integrated NTC temperature sensor
ASC300N1200MEP2B
2
Electrical Characteristic
s (TC = 25℃ unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
DS
Drain-source BreakdownVoltage
V
GS
=0V
1200
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=1200V, V
GS
=0V
300
uA
I
GSS
Gate-body Leakage Current
V
GS
=-10/+20V,V
DS
=0V
3
uA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS,
I
D
=30mA
2
4
V
R
DS(on)
Static Drain-source On Resistance
V
GS
=20V, I
D
=150A，T
VJ
=25C
T
VJ
=150C
5.3
8.4
7.3
mΩ
Ciss
Input Capacitance
VDS=1000V，VAC=25mV
f=1MHz
19.2
nF
Coss
Output Capacitance
0.73
Crss
Reverse Transfer Capacitance
45
pF
QGS
Gate-Source Charge
VDD=800V, VGS=-4/+20V
ID=150A,
230.1
nC
QGD
Gate-Drain Charge
234.9
QG
Total Gate Charge
714
td（on）
Turn-on delay time
VDD=800V,VGS=-4/+20V
ID=150A, RG(ext=2.5)
185
nS
tr
Rise Time
75
td(off)
Turn-off delay time
28
tf
Fall Time
26
Vsd
Diode Forward voltage
IF=180A, VGS=0V, T
J
=25C
6
V
Thermal Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RJC
Thermal Resistance, Junction-to-Case
Tc=90℃，PD=150W
0.2
C/W