WEJ ELECTRONIC CO.,LTD

2SA1213

TRANSISTOR (PNP)

FEATURES

Power dissipation

P

CM

: 0.5 W (Tamb=25℃)

Collector current

I

CM

: -2 A

Collector-base voltage

V

(BR)CBO

: -50 V

Operating and storage junction temperature range

T

J

, T

stg

: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V

(BR)CBO

Ic=-100µA , I

E

=0

-50 V

Collector-emitter breakdown voltage V

(BR)CEO

I

C

= -10mA , I

B

=0 -50 V

E mitter-b ase break dow n volt age V

(BR)EBO

I

E

= -100µA, I

C

=0

-5 V

Collector cut-off current I

CBO

V

CB

=-50 V , I

E

=0 -0.1

µA

E mitte r cut-off current I

EBO

V

EB

=-5 V , I

C

=0 -0.1

µA

h

FE 1

V

CE

=-2V, I

C

= -0.5A 70 240

DC current gain

h

FE 2

V

CE

=-2V, I

C

= -2A

20

Collector-emitter saturation voltage V

CEsat

I

C

=-1A, I

B

= -0.05A -0.5 V

Base-emitter satu ration voltage V

BEsat

I

C

=-1A, I

B

= -0.05A -1.2 V

Transition fre quency

f

T

V

CE

= -2V, I

C

=-0.5A 100 MHz

CLA SSIFICATION OF h

FE

Rank O Y

Range

70-140 120-240

Marking NO,NY

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

2SA1213

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