WEJ ELECTRONIC CO.,LTD
TIP31/31A/31B/31C TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
2 W (Tamb=25℃)
Collector current
I
CM:
3 A
Collector-base voltage
V
(BR)CBO
: TIP31: 40 V
TIP31A: 60 V
TIP31B: 80 V
TIP31C: 100 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
31
Collector-base breakdown voltage 31A
31B
31C
V(BR)
CBO
Ic= 100 µA, I
E
=0
40
60
80
100
V
31
Collector-emitter breakdown voltage 31A
31B
31C
V(BR)
CEO
Ic= 30 mA, I
B
=0
40
60
80
100
V
E mitter-base breakdow n volt age
V(BR)
EBO
I
E
= 100µ A, I
C
=0 5 V
31
Collector cut-off current 31A
31B
31C
I
CBO
V
CB
= 40V, I
E
=0
V
CB
= 60V, I
E
=0
V
CB
= 80V, I
E
=0
V
CB
= 100V, I
E
=0
0.2 mA
Collector cut-off curremt 31/31A
31B/31C
I
CEO
V
CE
= 30V , I
B
= 0
V
CE
= 60V , I
B
= 0
0.3
0.3
mA
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0 1 mA
h
FE(1)
V
CE
= 4V, I
C
= 3A 10 50
DC current gain
h
FE(2)
V
CE
= 4V, I
C
= 1A 25
Collector-emitter saturation voltage
V
CE(sat)
I
C
=3A, I
B
=375mA 1.2 V
Base-emitter voltage
V
BE(on)
V
CE
= 4V, I
C
=3A 1.8 V
Transition frequency
f
T
V
CE
=10V , I
C
=500mA 3 MH
Z
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
TIP31/31A/31B/31C
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WEJ ELECTRONIC CO.
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