WEJ ELECTRONIC CO.,LTD
MBR20200CT SCHOTTKY BARRIER RECTIFIER
FEATURES
· Schottky Barrier Chip
· Guard Ring Die Construction for Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Volt age Drop
· For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Characteristic Symbol Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blo c kin g Voltag e
V
RRM
V
RWM
V
R
200 V
Average Rectified Output Current
(Note 1) @ T
C
= 125℃
I
O
20
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
150
A
Repetitive Peak Reverse Surge Current
@ t≤ 2.0µs
I
RRM
1
A
Forward Voltage Drop @ I
F
=10A, T
C
=25℃
@I
F
=10A, T
C
=125 ℃
@ I
F
=20A, T
C
=25 ℃
@ I
F
=20A, T
C
=125℃
V
FM
0.95
0.8
1.0
0.9
V
Peak Reverse Current @ T
C
= 2 5℃
at Rate d DC Bl oc kin g Voltage @ T
C
=125℃
I
RM
1
50
mA
Typical Junction Capacitance (Note 2)
C
j
500
pF
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
℃
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.
1 2 3
TO-220
1. AN ODE
2. CATHODE
3.
ANODE
MBR20200CT
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