WEJ ELECTRONIC CO.,LTD
MBR2030CT-MBR2060CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
· Schottky Barrier Chip
· Guard Ring Die Construction for Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Volt age Drop
· For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Characteristic Symbol
MBR
2030
MBR
2035
MBR
2040
MBR
2045
MBR
2050
MBR
2060
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 35 40 45 50 60
V
PMS Reverse Voltage
V
R(RMS)
21 24.5 28 31.5 35 42
V
Average Rectified Output Current
(Note 1) @ T
C
=125℃
I
O
20
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
150
A
Forward Voltage Drop @ I
F
=20A, T
C
=25℃
@ I
F
=20A, T
C
=125℃
@ I
F
=10A, T
C
=25 ℃
@ I
F
=10A, T
C
=125 ℃
V
FM
0.84
0.72
0.70
0.57
0.95
0.85
0.80
0.70
V
Peak Reverse Current @ T
C
= 25℃
at Rated DC Blocking Voltage @ T
C
=125℃
I
RM
0.1
15
mA
Typical Junction Capacitance (Note 2)
C
j
650
pF
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
℃
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.
1 2 3
TO-220
1. AN ODE
2. CATHODE
3.
ANODE
MBR2030CT-MBR2060CT
Http:// www .wej.cn E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
RoHS