BSS123K2
Rev.A May.-2022
DATA SHEET
http://www.fsbrec.com 1 / 7
SOT-23 塑封封装 N 沟道 MOS 场效应管。
N-CHANNEL MOSFET in a SOT-23 Plastic Package.
灵敏的控制级触发电流和很低的维持电流。静电保护达 2KV，无卤产品。
Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV,HF Product.
用作一般的开关和相位控制。
Intended for use in general purpose switching and phase control applications.
内部等效电路 / Equivalent Circuit
PIN1：G PIN 2：S PIN 3：D
印章代码 / Marking
描述 / Descriptions
特征 / Features
用途 / Applications
引脚排列 / Pinning
Marking HSA
3
2
1
BSS123K2
Rev.A May.-2022
DATA SHEET
http://www.fsbrec.com 2 / 7
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Drain-Source Voltage V
DSS
100 V
Drain Current – Continuous I
D
170 mA
Drain Current– Pulsed
I
D
(T
C
=25℃)
680 mA
Continuous Drain–Source
I
S
170 mA
Gate-Source Voltage
V
GS
±20 V
Power Dissipation P
D
0.36 W
Thermal Resistance, Junction-to-Ambient
R
θJA
350 ℃/W
Operating and Storage Junction Temperature
Range
T
J
, T
STG
-55 to 150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Drain
–Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250
μ
A
100 V
Zero Gate Volta
ge Drain Current
I
DSS(1)
V
DS
=100V V
GS
=0V 1.0 μA
I
DSS(2)
V
DS
=100V V
GS
=0V
T
j
=85℃
30 μA
Gate
–Body Leakage. I
GSS
V
GS
=±20 V
DS
=0V ±10
uA
On
–State Drain Current I
D(on)
V
DS
=5.0V V
GS
=10V 0.68 A
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
I
D
=250uA
1.5 2.0 2.5 V
Static Drain
–Source
On
–Resistance
R
DS(on)(1)
V
GS
=10V I
D
=0.17A 3.3 6.0 Ω
R
DS(on)(2)
V
GS
=4.5V I
D
=0.17A 4.0 10 Ω
Drain
–Source Diode Forward
Voltage
V
SD
V
GS
=0V I
S
=0.34A 0.8 1.3 V
Input Capacitance
C
iss
V
DS
=25V V
GS
=0V
f=1.0MHz
73 pF
Output C
apacitance C
oss
7 pF
Reverse Transfer Capacitance
C
rss
3.4 pF
Turn
–On Delay Time t
d(on)
I
D
=0.28A V
GS
=10V
V
DD
=30V R
G
=6.0Ω
1.8 ns
Turn
–On Rise Time t
r
11 ns
Turn
–Off Delay Time t
d(off)
19 ns
Turn
–Off Fall Time t
f
2.6 ns
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)