1N4001
THRU
1N4007
FEATURES
• Low coat construction
• Low forward voltage drop
• Low reverse leakage
• High forward surge current capability
• High temperature soldering guaranteed:
260℃/10 secods/.375”(9.5mm)lead length at 5 lbs(2.3kg) tension
MECHANICAL DATA
• Case: Transfer molded plastic
• Epoxy: UL94V-O rate flame retardant
• Polarity: Color band denotes cathode end
• Lead: Plated axial lead, solderable per MIL-STD-202E method 208C
• Mounting position: Any
• Weight: 0.012 ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
• Ratings at 25
O
C ambient temperature unless otherwise specified
• Single Phase, half wave, 60Hz, resistive or inductive load
• For capacitive load derate current by 20%
SYMBOLS
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
UNIT
Maximum Repetitive Peak Reverse Voltage
V
RRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
V
RMS
35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
V
DC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Rectified Current
0.375”(9.5mm) lead length at T
A
= 25℃
I
(AV)
1.0 Amps
Peak Forward Surge Current
8.3mS single half sine wave superimposed on
rated load (JEDEC method)
I
FSM
30 Amps
Maximum Instantaneous Forward Voltage @ 1.0A
V
F
1.1 Volts
T
A
= 25℃
5.0
Maximum DC Reverse Current at Rated
DC Blocking Voltage per element
T
A
= 100℃
I
R
50
µA
Maximum Full Load Reverse Current, full cycle average
0.375”(9.5mm)lead length at T
L
=75℃
I
R(AV)
30 µA
Typical Junction Capacitance (Note 1)
C
J
13 pF
Typical Thermal Resistance (Note 2)
R
θJA
50
℃/W
Operating Junction Temperature Range
T
J
-55 to +150
℃
Storage Temperature Range
T
STG
-55 to +150
℃
Notes:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance from junction to terminal 6.0mm
2
copper pads to each terminal.
3. The chip size is 40mil×40mil
1.0(25.4)
MIN.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.107(2.7)
.080(2.0)
DIA.
.034(0.9)
.028(0.7)
DIA.
Dimensions in inches and (millimeters)
DO-41
120
140
2.01.81.6
INSTANTANEOUS REVERSE CURRENT,
INSTANTANEOUS FORWARD CURRENT,
CAPACITANCE,(pF)
TJ=25° C F=1MHz
REVERSE VOLTAGE,(VOLTS)
10
0.1
4.0
1.0
10.0
FIG.5-TYPICAL JUNCTION CAPACITANCE
INSTANTANEOUS FORWARD VOLTAGE,(V)
10
100
(A)(A)
0.01
0.1
1
Pulse Width=300us
1% Duty Cycle
0.6 0.8 1.01.2
T =25° C
j
1.4
100
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
(mA)
0
0.01
20
0.1
1.0
100
60
40
80
T =25° C
j
AMBIENT TEMPERATURE, (° C)
FORWARD CHARACTERISTICS
FIG.3-TYPICAL INSTANTANEOUS
10
(A)
AVERAGE FORWARD CURRENT,
25
Resistive or
Half Wave 60Hz
Inductive Load
Single Phase
0
0
0.4
50
0.6
0.8
100
75
125
175
150
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.4-TYPICAL REVERSE
FORWARD SURGE CURRENT
(JEDEC Method) =T
8.3ms Single Half Sine-Wave
NUMBER OF CYCLES AT 60 Hz
10
PEAK FORWARD SURGE
CURRENT, (A)
0
1
10
25
20
30
2
5
8
CHARACTERISTICS
T =100° C
j
10
20
50
jmaxj
T
100
FIG.2-MAXIMUM NON-REPETITIVE PEAK
RATING
AND
CHRACTERISTIC
CURVES
1N4001
Thur
1N4007
0.2
1.0
1.2