Absolute Maximum Ratings (T
C
=25°C unless otherwise specified)
1/5
100V
I
D
2.4A
BV
DSS
120mΩ
R
DS
(ON)
Description
The GSF1002 utilizes the latest techniques to achieve high cell density and low on-resistance. These
features make this device extremely efficient and reliable for use in high efficiency switch mode power
supply and a wide variety of other applications.
Main
Produc
t Characteristics
Features and Benefits
§
Advanced
MOSFET process
technology
§
Ideal
for high efficiency switched mode power supplies
§
Low on-resistance with low gate charge
§
Fast switching and reverse
body
recovery
SOT-23-6L
100V N-Channel MOSFET
GSF1002
G
D
S
Symbol
V
DS
V
GS
I
DM
R
θJA
T
STG
T
J
Unit
V
V
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous(T
C
=25°C)
Drain Current-Pulsed
1
W
°C-55 To +150
°C/W
A
Max.
100
±20
2.4
9.6
80
Operating Junction Temperature Range -55 To +150 °C
Drain Current-Continuous(T
C
=75°C)
I
D
1.8
A
P
D
Power Dissipation-Derate Above 25°C 0.012 W/°C
Power Dissipation(T
C
=25°C)
Storage Temperature Range
1.56
Thermal Resistance, Junction-to-Ambient
D
D
D
S
Schematic Diagram
D
G
Electrical Characteristics (T
J
=25°C unless otherwise specified)
2/5
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
100V N-Channel MOSFET
GSF1002
Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=250μA 100 - - V
BV
DSS
Temperature Coefficient △BV
DSS
/△T
J
Reference to 25°C,
I
D
=1mA
- 0.04 - V/°C
V
DS
=100V, V
GS
=0V,
T
J
=25°C
- - 1 μA
V
DS
=80V, V
GS
=0V,
T
J
=125°C
- - 10 μA
Gate-Source Leakage Current I
GSS
V
GS
=±20V, V
DS
=0V - - ±100 nA
V
GS
=10V, I
D
=1A - 94 120
V
GS
=4.5V, I
D
=0.5A - 96 130
Gate Threshold Voltage V
GS(th)
1.2 1.7 2.5 V
V
GS(th)
Temperature Coefficient △V
GS(th)
- -5 - mV/°C
Forward Transconductance g
fs
V
DS
=10V, I
D
=1A - 4 - S
Total Gate Charge
2,3
Q
g
- 21.2 40
Gate-Source Charge
2,3
Q
gs
- 3.1 6
Gate-Drain Charge
2,3
Q
gd
- 5 10
Turn-On Delay Time
2,3
t
d(on)
- 18 36
Rise Time
2,3
t
r
- 4 8
Turn-Off Delay Time
2,3
t
d(off)
- 40 80
Fall Time
2,3
t
f
- 3 6
Input Capacitance C
lss
- 1400 2800
Output Capacitance C
oss
- 60 120
Reverse Transfer Capacitance C
rss
- 35 70
Gate Resistance R
g
V
GS
=0V, V
DS
=0V,
F=1MHz
- 2 4 Ω
Continuous Source Current I
S
- - 2.5 A
Pulsed Source Current
2
I
SM
- - 5 A
Diode Forward Voltage
2
V
SD
V
GS
=0V, I
S
=1A,
T
J
=25°C
- - 1 V
Reverse Recovery Time t
rr
- 46 - nS
Reverse Recovery Charge Q
rr
- 50 - nC
V
G
=V
D
=0V,
Force Current
On/Off Characteristics
I
DSS
Drain-Source Leakage Current
V
GS
=V
DS
, I
D
=250μA
Dynamic and Switching Characteristics
Drain-Source Diode Characteristics and Maximum Ratings
V
DS
=25V, V
GS
=0V,
F=1MHz
R
DS(ON)
Static Drain-Source On-
Resistance
3
mΩ
V
DS
=50V, I
D
=2A,
V
GS
=10V
V
DD
=50V, R
G
=3.3Ω,
V
GS
=10V, I
D
=1A
nC
nS
pF
V
GS
=0V, I
S
=1A,
di/dt=100A/μs,
T
J
=25°C