MPSW60M041
marching-power© Copyright reserved
Ver1.1
APPLICATIONS
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply (UPS)
l Power Factor Correction (PFC)
l AC to DC Converters
Ordering Information
Type NO.
Marking
Package Code
MPVA7N65F
MPVA7N65F
TO-220F
Absolute Maximum Ratings T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage (V
GS
= 0V)
V
DSS
650
V
Continuous Drain Current
I
D
7
A
Pulsed Drain Current (note1)
I
DM
28
A
Gate-Source Voltage
V
GSS
±30
V
Single Pulse Avalanche Energy (note2)
E
AS
230
mJ
Avalanche Current (note1)
I
AR
4
A
Repetitive Avalanche Energy (note1)
E
AR
21.7
mJ
Power Dissipation (T
C
= 25ºC)
P
D
35
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
R
thJC
1.98
ºC/W
Thermal Resistance, Junction-to-Ambient
R
thJA
62.5
1
Ver2.1
MPVA7N65F
Power MOSFET
FEATURES
l BV
DSS
: 650V, I
D
=7A
l R
DS(on)
: 1.4Ω(Max) @V
GS
=10V
l Very Low FOM (R
DS(on)
*Q
g
)
l Excellent stability and uniformity
TO-220F
G
S
D
MPSW60M041
marching-power© Copyright reserved
Ver1.1
Specifications T
J
= 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
650
--
--
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC
--
--
1
μA
Gate-Source Leakage
I
GSS
V
GS
= ±30V
--
--
±100
nA
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
2.0
--
4.0
V
Drain-Source On-Resistance (Note4)
R
DS(on)
V
GS
= 10V, I
D
= 3.5A
--
1.1
1.4
Ω
Dynamic
Input Capacitance
C
iss
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
--
1178
--
pF
Output Capacitance
C
oss
--
89
--
Reverse Transfer Capacitance
C
rss
--
10
--
Total Gate Charge
Q
g
V
DD
= 400V, I
D
= 7.0A,
V
GS
= 10V
--
19
--
nC
Gate-Source Charge
Q
gs
--
5
--
Gate-Drain Charge
Q
gd
--
5
--
Turn-on Delay Time
t
d(on)
V
DD
= 325V, I
D
= 7.0A,
R
G
= 25Ω
--
33
--
ns
Turn-on Rise Time
t
r
--
50
--
Turn-off Delay Time
t
d(off)
--
42
--
Turn-off Fall Time
t
f
--
35
--
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
T
C
= 25ºC
--
--
7
A
Pulsed Diode Forward Current
I
SM
--
--
28
Body Diode Voltage
V
SD
T
J
= 25ºC, I
SD
= 7.0A, V
GS
= 0V
--
--
1.4
V
Reverse Recovery Time
t
rr
V
R
= 400V, I
F
= 7.0A,
di
F
/dt = 100A/μs
--
365
--
ns
Reverse Recovery Charge
Q
rr
--
3.4
--
μC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
4. Essentially independent of operating temperature
2
Ver2.1
MPVA7N65F
Power MOSFET