MPSW60M041
marching-power© Copyright reserved
Ver1.1
APPLICATIONS
⚫ Switch Mode Power Supply (SMPS)
⚫ Uninterruptible Power Supply (UPS)
⚫ Power Factor Correction (PFC)
⚫ AC to DC Converters
Ordering Information
Type NO.
Marking
Package Code
MPVA7N65B
MPVA7N65B
TO
-220F
MPVP7N65B
MPVP7N65B
TO
-220
MPVH7N65B
MPVH7N65B
TO
-262
MPVU7N65B
MPVU7N65B
TO
-251
MPVD7N65B
MPVD7N65B
TO
-252
MPVC7N65B
MPVC7N65B
TO
-263
Absolute
Maximum Ratings T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
220F
220-251-252-262-263
Drain
-Source Voltage (V
GS
= 0V) V
DSS
650 V
Cont
inuous Drain Current I
D
7 A
Pulsed
Drain Current (note1) I
DM
28 A
Gate
-Source Voltage V
GSS
±30
V
Single Pulse Avalanche Energy (note2)
E
AS
230 mJ
Avalanche
Current (note1) I
AR
4 A
Repetitive
Avalanche Energy (note1) E
AR
21.7 mJ
Power
Dissipation (T
C
= 25ºC) P
D
35 97 W
Operating
Junction and Storage Temperature Range T
J
, T
stg
-55~+150 ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
220F 220-251-252-262-263
Thermal
Resistance, Junction-to-Case R
thJC
1.98 1.29
ºC
/W
Thermal
Resistance, Junction-to-Ambient R
thJA
62.5 60.0
1
Ver1.0
MPVX7N65B Series
Power MOSFET
FEATURES
⚫ BV
DSS
: 650V, I
D
=7A
⚫ R
DS(on)
: 1.3Ω(Max) @V
GS
=10V
⚫ Very Low FOM (R
DS(on)
*Q
g
)
⚫ Excellent stability and uniformity
TO-263
G
D
S
G
S
D
TO-220F
TO-252
TO-262
G
D
S
G
D
S
D
G
S
TO-220
TO-251
G
S
D
MPSW60M041
marching-power© Copyright reserved
Ver1.1
Specifications
T
J
= 25ºC, unless otherwise noted
Parameter
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
Static
Drain
-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0V, I
D
= 250µA 650 -- -- V
Zero
Gate Voltage Drain Current I
DSS
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC -- -- 1 μA
Gate
-Source Leakage I
GSS
V
GS
= ±30V
-- --
±100
nA
Gate
-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.0 -- 4.0 V
Drain
-Source On-
Resistance (Note4)
R
DS(on)
V
GS
= 10V, I
D
= 3.5A -- 1.1 1.3 Ω
Dynamic
Input
Capacitance C
iss
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
-- 1098 --
pF
Output
Capacitance C
oss
-- 93 --
Reverse
Transfer Capacitance C
rss
-- 11 --
Total
Gate Charge Q
g
V
DD
= 400V, I
D
= 7.0A,
V
GS
= 10V
-- 20 --
nC
Gate
-Source Charge Q
gs
-- 4 --
Gate
-Drain Charge Q
gd
-- 7 --
Turn
-on Delay Time t
d(on)
V
DD
= 325V, I
D
= 7.0A,
R
G
= 25Ω
-- 29 --
ns
Turn
-on Rise Time t
r
-- 48 --
Turn
-off Delay Time t
d(off)
-- 39 --
Turn
-off Fall Time t
f
-- 33 --
Drain
-Source Body Diode Characteristics
Continuous
Body Diode Current I
S
T
C
= 25ºC
-- -- 7
A
Pulsed
Diode Forward Current I
SM
-- -- 28
Body
Diode Voltage V
SD
T
J
= 25ºC, I
SD
= 7.0A, V
GS
= 0V -- -- 1.4 V
Reverse
Recovery Time t
rr
V
R
= 400V, I
F
= 7.0A,
di
F
/dt = 100A/μs
-- 365 -- ns
Reverse
Recovery Charge Q
rr
-- 3.4 -- μC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
4. Essentially independent of operating temperature
2
Ver1.0
MPVX7N65B Series
Power MOSFET