Drain-Source breakdown voltage: BV
DSS
=650V (Min.)
Low gate charge: Q
g
=20nC (Typ.)
Low drain-source On resistance: R
DS(on)
=1.35 (Max.)
100% avalanche tested
RoHS compliant device
Ordering Information
SWITCHING REGULATOR APPLICATIONS
Features
Absolute maximum ratings
(T
C
=25C unless otherwise noted)
Characteristic Symbol Rating Unit
Drain-source voltage V 650 V
Gate-source voltage V
GSS
30
V
Drain current (DC)
*
I
D
T
c
=25C
7.0 A
T
c
=100C
5.48 A
Drain current (Pulsed)
*
I
DM
28 A
Single avalanche current
(Note 2)
I
AS
7.0 A
Single pulsed avalanche energy
(Note 2)
E
AS
245 mJ
Repetitive avalanche current
(Note 1)
I
AR
5.5 A
Repetitive avalanche energy
(Note 1)
E
AR
2.9 mJ
Power dissipation P
D
58 W
Junction temperature T
J
150
C
Storage temperature range T
stg
-55~150
C
* Limited only maximum junction temperature
Thermal Characteristics
Characteristic Symbol Rating Unit
Thermal resistance, junction to case R
th(j-c)
Max. 4.27
C/W
Thermal resistance, junction to ambient R
th(j-a)
Max. 62.5
ORDER CODE
MARKING
PACKING
G
D
PIN Connection
S
TO-251
MPVU7N65
Power MOSFET
1/5marching-power© Copyright reserved
Ver1.0
MPVU7N65MPVU7N65 TO-251
- 20 -
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BV
DSS
I
D
=250uA, V
GS
=0V 650
Gate threshold voltage V
GS(th)
I
D
=250uA, V
DS
=V
GS
2 3 4 V
Drain-source cut-off current I
DSS
V
DS
=650V, V
GS
=0V - - 1 uA
Gate leakage current I
GSS
V
DS
=0V, V
GS
=30V
- -
100
nA
Drain-source on-resistance R
DS(ON)
V
GS
=10V, I
D
=3.5A
Forward transfer conductance
(Note 3)
g
fs
V
DS
=10V, I
D
=3.5A - 4 - S
Input capacitance
C
iss
V
DS
=25V, V
GS
=0V,
f=1.0MHz
- 760 1046
pF Output capacitance C
oss
- 67 92
Reverse transfer capacitance C
rss
- 9 12
Turn-on delay time
(Note 3,4)
t
d(on)
V
DD
=325V, I
D
=7.0A,
R
G
=25
- 55 128
ns
Rise time
(Note 3,4)
t
r
- 79 174
Turn-off delay time
(Note 3,4)
t
d(off)
- 94 208
Fall time
(Note 3,4)
t
f
- 33 75
Total gate charge
(Note 3,4)
Q
g
V
DS
=400V, V
GS
=10V,
I
D
=7.0A
nC
Gate-source charge
(Note 3,4)
Q
gs
- 4 -
Gate-drain charge
(Note 3,4)
Q
gd
- 7 -
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Source current (DC) I
S
Integral reverse diode
in the MOSFET
- - 7.0 A
Source current (Pulsed) I - - 28 A
Forward voltage V
SD
V
GS
=0V, I
S
=7.0A - - 1.4 V
Reverse recovery time
(Note 3,4)
t
rr
I
S
=7.0A, V
GS
=0V
dI
F
/dt=100A/us
- 494 - ns
Reverse recovery charge
(Note 3,4)
Q
rr
- 2 - uC
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=15mH, I
AS
=5.5A, V
DD
=50V, R
G
=25, Starting T
J
=25C
3. Pulse test: Pulse width300us, Duty cycle��2%
4. Essentially independent of operating temperature typical characteristics
V
-
-
1.35
MPVU7N65
Power MOSFET
2/5marching-power© Copyright reserved
Ver1.0