BZX55C
Silicon Planar Zener Diodes
The Zener voltages are graded according to the
international E24 standard. Other tolerances and
higher Zener voltages are upon request.
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter Symbol Value Unit
Power Dissipation P
tot
500
1)
mW
Junction Temperature T
j
175
O
C
Storage Temperature Range T
stg
- 55 to + 175
O
C
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
Characteristics at T
a
= 25
O
C
Parameter Symbol Max. Unit
Thermal Resistance Junction to Ambient Air
R
thA
0.3
1)
K/mW
Forward Voltage
at I
F
= 100 mA
V
F
1 V
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
Max. 2.9
Max. 1.9
Glass Case DO-34
Max. 0.45
Min. 27.5
Min. 27.5
XXX
Cathode Band
Part No.
Dimensions in mm
Black
Black
Max. 3.9
Max. 1.9
Glass Case DO-35
Max. 0.5
Min. 27.5
Min. 27.5
XXX
Cathode Band
Part No.
Dimensions in mm
Black
Black
BZX55C
Zener Voltage Range
1)
Dynamic Resistance Reverse Leakage Current
V
znom
V
ZT
at I
ZT
Z
ZT
Z
ZK
at I
ZK
T
a
=25
O
CT
a
=125
O
C I
R
at V
R
Temp. Coefficient
of Zener Voltage
Type
(V) (V) (mA) Max. (Ω)Max. (Ω) (mA) Max. (µA) Max. (µA) (V) TKvz (%/K)
BZX55C0V8
2)
0.8 0.73...0.83 5 8 50 1 - - - -0.26...-0.23
BZX55C2V0 2 1.8...2.15 5 85 600 1 100 200 1 -0.09...-0.06
BZX55C2V2 2.2 2.08...2.33 5 85 600 1 75 160 1 -0.09...-0.06
BZX55C2V4 2.4 2.28...2.56 5 85 600 1 50 100 1 -0.09...-0.06
BZX55C2V7 2.7 2.5...2.9 5 85 600 1 10 50 1 -0.09...-0.06
BZX55C3V0 3 2.8...3.2 5 85 600 1 4 40 1 -0.08...-0.05
BZX55C3V3 3.3 3.1...3.5 5 85 600 1 2 40 1 -0.08...-0.05
BZX55C3V6 3.6 3.4...3.8 5 85 600 1 2 40 1 -0.08...-0.05
BZX55C3V9 3.9 3.7...4.1 5 85 600 1 2 40 1 -0.08...-0.05
BZX55C4V3 4.3 4...4.6 5 75 600 1 1 20 1 -0.06...-0.03
BZX55C4V7 4.7 4.4...5 5 60 600 1 0.5 10 1 -0.05...+0.02
BZX55C5V1 5.1 4.8...5.4 5 35 550 1 0.1 2 1 -0.02...+0.02
BZX55C5V6 5.6 5.2...6 5 25 450 1 0.1 2 1 -0.05...+0.05
BZX55C6V2 6.2 5.8...6.6 5 10 200 1 0.1 2 2 0.03...0.06
BZX55C6V8 6.8 6.4...7.2 5 8 150 1 0.1 2 3 0.03...0.07
BZX55C7V5 7.5 7...7.9 5 7 50 1 0.1 2 5 0.03...0.07
BZX55C8V2 8.2 7.7...8.7 5 7 50 1 0.1 2 6.2 0.03...0.08
BZX55C9V1 9.1 8.5...9.6 5 10 50 1 0.1 2 6.8 0.03...0.09
BZX55C10 10 9.4...10.6 5 15 70 1 0.1 2 7.5 0.03...0.1
BZX55C11 11 10.4...11.6 5 20 70 1 0.1 2 8.2 0.03...0.11
BZX55C12 12 11.4...12.7 5 20 90 1 0.1 2 9.1 0.03...0.11
BZX55C13 13 12.4...14.1 5 26 110 1 0.1 2 10 0.03...0.11
BZX55C15 15 13.8...15.6 5 30 110 1 0.1 2 11 0.03...0.11
BZX55C16 16 15.3...17.1 5 40 170 1 0.1 2 12 0.03...0.11
BZX55C18 18 16.8...19.1 5 50 170 1 0.1 2 13 0.03...0.11
BZX55C20 20 18.8...21.2 5 55 220 1 0.1 2 15 0.03...0.11
BZX55C22 22 20.8...23.3 5 55 220 1 0.1 2 16 0.04...0.12
BZX55C24 24 22.8...25.6 5 80 220 1 0.1 2 18 0.04...0.12
BZX55C27 27 25.1...28.9 5 80 220 1 0.1 2 20 0.04...0.12
BZX55C30 30 28...32 5 80 220 1 0.1 2 22 0.04...0.12
BZX55C33 33 31...35 5 80 220 1 0.1 2 24 0.04...0.12
BZX55C36 36 34...38 5 80 220 1 0.1 2 27 0.04...0.12
BZX55C39 39 37...41 2.5 90 500 0.5 0.1 5 30 0.04...0.12
BZX55C43 43 40...46 2.5 90 500 0.5 0.1 5 33 0.04...0.12
BZX55C47 47 44...50 2.5 110 600 0.5 0.1 5 36 0.04...0.12
BZX55C51 51 48...54 2.5 125 700 0.5 0.1 10 39 0.04...0.12
BZX55C56 56 52...60 2.5 135 700 0.5 0.1 10 43 0.04...0.12
BZX55C62 62 58...66 2.5 150 1000 0.5 0.1 10 47 0.04...0.12
BZX55C68 68 64...72 2.5 200 1000 0.5 0.1 10 51 0.04...0.12
BZX55C75 75 70...79 2.5 250 1000 0.5 0.1 10 56 0.04...0.12
1)
Tested with pulses t
p
= 20 ms.
2)
The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode
lead to the negative pole.