2N2222 / 2N2222A
for switching and AF amplifier applications.
The transistor is subdivided into one group
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter Symbol Value Unit
Collector Base Voltage 2N2222
2N2222A
V
CBO
60
75
V
Collector Emitter Voltage 2N2222
2N2222A
V
CEO
30
40
V
Emitter Base Voltage 2N2222
2N2222A
V
EBO
5
6
V
Collector Current I
C
600 mA
Power Dissipation P
tot
625 mW
Junction Temperature T
j
150
O
C
Storage Temperature Range T
stg
- 55 to + 150
O
C
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
DONGGUAN NANJING ELECTRONICS LTD.,
www.dgnjdz.com
NPN Silicon Epitaxial Planar Transistor
2N2222 / 2N2222A
Characteristics at T
a
= 25
O
C
Parameter Symbol Min. Max. Unit
DC Current Gain
at V
CE
= 10 V, I
C
= 0.1 mA
at V
CE
= 10 V, I
C
= 1 mA
at V
CE
= 10 V, I
C
= 10 mA
at V
CE
= 10 V, I
C
= 150 mA
at V
CE
= 10 V, I
C
= 500 mA
2N2222
2N2222A
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
35
50
75
100
30
40
-
-
-
300
-
-
-
-
-
-
-
-
Collector Base Cutoff Current
at V
CB
= 50 V
at V
CB
= 60 V
2N2222
2N2222A
I
CBO
-
-
10
10
nA
Collector Base Breakdown Voltage
at I
C
= 10 µA
2N2222
2N2222A
V
(BR)CBO
60
75
-
-
V
Collector Emitter Breakdown Voltage
at I
C
= 10 mA
2N2222
2N2222A
V
(BR)CEO
30
40
-
-
V
Emitter Base Breakdown Voltage
at I
E
= 10 µA
2N2222
2N2222A
V
(BR)EBO
5
6
-
-
V
Collector Emitter Saturation Voltage
at I
C
= 150 mA, I
B
= 15 mA
at I
C
= 500 mA, I
B
= 50 mA
2N2222
2N2222A
2N2222
2N2222A
V
CE(sat)
-
-
-
-
0.4
0.3
1.6
1
V
Base Emitter Saturation Voltage
at I
C
= 150 mA, I
B
= 15 mA
at I
C
= 500 mA, I
B
= 50 mA
2N2222
2N2222A
2N2222
2N2222A
V
BE(sat)
-
0.6
-
-
1.3
1.2
2.6
2
V
Gain Bandwidth Product
at I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
f
T
250 - MHz
Collector Output Capacitance
at V
CB
= 10 V, f = 1 MHz
C
ob
- 8 pF
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