FQP50N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 52.4A, 60V, R
DS(on)
= 0.021Ω @V
GS
= 10 V
• Low gate charge ( typical 24.5 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Rating s T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQP50N06L Units
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
52.4 A
- Continuous (T
C
= 100°C)
37.1 A
I
DM
Drain Current - Pulsed
(Note 1)
210 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
990 mJ
I
AR
Avalanche Current
(Note 1)
52.4 A
E
AR
Repetitive Avalanche Energy
(Note 1)
12.1 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
121 W
- Derate above 25°C 0.81 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol P arameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 1.24 °C/W
R
θCS
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
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S
D
G
TO-220
FQP S er ies
G
S
D
FQP50N06L
Electrical Characteristics T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 300µH, I
AS
= 52.4A, V
DD
= 25V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 52.4A, di/dt ≤ 300A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Co nditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
60 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Vo ltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
-- 0.06 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
-- -- 1 µA
V
DS
= 48 V, T
C
= 150°C
-- -- 10 µA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -20 V, V
DS
= 0 V
-- -- -100 nA
On Characteri st ics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1.0 -- 2.5 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 26.2 A
V
GS
= 5 V, I
D
=26.2 A
--
--
0.017
0.020
0.021
0.025
Ω
g
FS
Forward Transconductance
V
DS
= 25 V, I
D
= 26.2 A
-- 40 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 1250 1630 pF
C
oss
Output Capacitance -- 445 580 pF
C
rss
Reverse Transfer Capacitance -- 90 120 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 30 V, I
D
= 26.2 A,
R
G
= 25 Ω
-- 20 50 ns
t
r
Turn-On Rise Time -- 380 770 ns
t
d(off)
Turn-Off De l a y Time -- 8 0 170 n s
t
f
Turn-Off F a ll Time -- 1 4 5 300 n s
Q
g
Total Gate Charge
V
DS
= 48 V, I
D
= 52.4 A,
V
GS
= 5 V
-- 24.5 32 nC
Q
gs
Gate-Source Charge -- 6 -- nC
Q
gd
Gate-Drain Charge -- 14.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 52.4 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 210 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 52.4 A
-- -- 1.5 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 52.4 A,
dI
F
/ dt = 100 A/µs
-- 65 -- ns
Q
rr
Reverse Recovery Charge -- 125 - - nC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)