50Amps,60Volts
N-CHANNELMOSFET
1.Description
TheKIA50N06isthree-terminalsilicondevicewithcurrentconductioncapabilityofabout50A,
fastswitchingspeed.Lowon-stateresistance,breakdownvoltageratingof60V,andmaxthreshold
voltagesof4volt.Itismainlysuitableelectronicballast,andlowpowerswitching
2. Features
n
R
DS(ON)
=18mΩ@V
GS
=10V.
n
Ultralowgatecharge(typical30nC)
n
Lowreversetransfercapacitance
n
Fastswitchingcapability
n
100％ avalancheenergyspecified
n
Improveddv/dtcapability
3. Pinconfiguration
1of6
Pin Function
1 Gate
2 Drain
3 Source
4 Drain
50N06
50Amps,60Volts
N-CHANNELMOSFET
4. Absolutemaximumratings
Parameter Symbol Value Unit
Draintosourcevoltage V
DSS
60 V
Gatetosourcevoltage V
GSS
±20 V
Continuousdraincurrent
T
J
=25 ºC I
D
50 A
T
J
=100 ºC I
D
35 A
Draincurrentpulsed (note1) I
DM
200 A
Singlepulsedavalancheenergy (note2) E
AS
480 mJ
Repetitiveavalancheenergy (note1) E
AR
13 mJ
Peakdioderecoverydv/dt (note3) dv/dt 7 V/ns
Totalpowerdissipation(T
J
=25 ºC) P
D
130 W
Deratingfactorabove25 ºC P
D
0.9 W/ ºC
Operatingjunctiontemperature T
J
-55~+150 ºC
Storagetemperature T
STG
-55~+150 ºC
Note:Absolutemaximumratingsarethosevaluesbeyondwhichthedevicecouldbepermanently
damaged.
Absolutemaximumratingsarestressratingsonlyandfunctionaldeviceoperationisnotimplied.
5. Thermalresistance
Parameter Symbol Typ Max Units
Thermalresistance,junction-to-case θ
JC
1.15 ºC/W
Thermalresistance,case-to-sink θ
CS
0.5 ºC/W
Thermalresistance,junction-to-ambient θ
JA
62.5 ºC/W
2of6
50N06