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Collector-Base Voltage 25 V
9
&(2
Collector-Emitter Voltage 18 V
9
(%2
Emitter-Base Voltage 4 V
,
&
Collector Current -Continuous 0.05
A
3
'
Collector Power Dissipation 400
mW
T
M
Junction Temperature 1
VWJ
Storage T
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Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
25 V
Collector-emitter b
reakdown voltage
V
(BR)CEO
I
C
=0.1mA,I
B
=0 18 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100A,I
C
=0 4 V
Collector cut-off current
I
CBO
V
CB
=20V,I
E
=0 0.1 nA
Collector cut-off current
I
CEO
V
CE
=15V,I
B
=0 0.1 A
Emitter cut-off current
I
EBO
EB
V=3V,
C
I=0
0.1 A
DC current gain
h
FE
V
CE
=5V, I
C
=1mA
28 270
Collector-emitter saturation voltage
V
CE(sat)
I
C
=10mA,I
B
=1mA V
Base-emitter saturation voltage
V
BE(sat)
I
C
=10mA,I
B
=1mA 1.42 V
Transition frequency
f
T
V =5V
CE
,I
C
=50mA,f=400MHz
800 MHz
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5
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