ƔTRANSISTOR (NPN)
FEATURES
ƔPower Dissipation
Ɣ P
CM
: 1 W (T
a
=25
)
:7
F

6\PERO
 3DUDPHWHU
9DOXH
8QLW
9
&%2
Collector-Base Voltage 40 V
9
&(2
Collector-Emitter Voltage 25 V
9
(%2
Emitter-Base Voltage 5 V
,
&
Collector Current -Continuous 1.5
A
3
'
Collector Power Dissipatio
n 625
mW
7
M
Junction Temperature 1
7
VWJ
Storage T
empe
rature -55 

5
-$
T
hermal Resist
ance rom Junction o
Ambient

/W
25'(5,1*,1)250
$
7
,21
3DUW1X
PEHU 3DFNDJH 3DFNLQJ0HWKRG 3DFN4XDQWLW\


��

200
TO-92 Bulk 1000pcs/Bag
Tape 2000pcs/Box
66
723ODVWLF(QFDSVXODWH7UDQVLVWRUV
0(&+$1,&$/ '$7$
Ɣ
&DVHVW\OH72PROGHGSODVWLF
Ɣ
0RXQWLQJSRVLWLRQDQ\
TO – 92
(0,77(5
%$6(
&2//(
&7
25








7<3





0LQ



0D[

0D[

72
0$;,0805$7,1*6$1'&+$5$&7(5,67,&6
# & $PELHQW 7HPSHUDWXUH XQOHVV RWKHUZLVH QRWHG
http://www.lujingsemi.com 2017.6ͲRev.A
1
Parameter Symbol Test conditions Min Typ Max Unit
Co
llector-base breakdown voltage
V
(BR)CBO
I
C
=100uA, I
E
=0 40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=0.1mA, I
B
=
025 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100μA, I
C
=0 5 V
Collector cut-off current
I
CBO
CB
V =40V, I
E
=0 0.1 μA
Emitter cut-off current
I
CEO
CE
V =20V, I
E
=0 0.1 μA
Emitter cut-off current
I
EBO
EB
V=5V, I
C
=0 0.1 μA
h
FE(1)
CE
V=1V, I
C
=100mA 85 400
DC current gain
h
FE(2)
CE
V=1V, I
C
=800mA 40
Collector-emitter saturation voltage
V
CE
(sat)
C
I =800mA, I
B
=80mA .50V
Base-emitter saturation voltage
V
BE(
sat)
C
I =800mA, I
B
=80mA 1 .2 V
Base-emitter voltage
V
BE
CE
V=1
V, I
C
=
10m
A
1
V
Transition frequency
f
T
CE
V=
10V, I
C
=
50mA,f=30MH
Z
100
MHz
CLASSIFICATION OF h
FE(1)
Rank
BCDD3
Range
85-160 120-200 160-300 300-400
0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
110100
1
10
100
1000
1 10 100 1000
0.2
0.4
0.6
0.8
1.0
1.2
0.1 1 10
1
10
100
1 10 100 1000
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
100
120
140
1 10 100 1000
1
10
100
1000
300
30
3
30
3
1500
300
30
3
COMMON EMITTER
V
CE
=1V
COLLCETOR CURRENT I
C
(mA)
BASE-EMMITER VOLTAGE V
BE
(V)
I
C
V
BE
——
T
a
=100
ć
T
a
=25
ć
I
C
f
T
——
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
V
CE
=10V
T
a
=25
ć
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
I
C
V
BEsat
——
=10
T
a
=100
ć
T
a
=25
ć
1500
C
ob
C
ib
CAPACITANCE C (pF)
REVERSE VOLTAGE V (V)
V
CB
/ V
EB
C
ob
/ C
ib
——
f=1MHz
I
E
=0/I
C
=0
T
a
=25
ć
200
20
300
303
300
30
3
3
30
300
30030
3
30
300
COMMON EMITTER
V
CE
=1V
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(mA)
T
a
=100ć
T
a
=25
ć
I
C
h
FE
——
1500
COMMON
EMITTER
T
a
=25
ć
500uA
450uA
400uA
350uA
300uA
250uA
200uA
150uA
100uA
I
B
=50uA
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Static Characteristic
3
0.3
30
3
=10
T
a
=100
ć
T
a
=25
ć
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
COLLECTOR CURRENT I
C
(mA)
I
C
V
CEsat
——
1500
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
P
C
T
a
AMBIENT TEM
PERATURE T
a
( )ć
COLLECTOR POWER DISSIPATION
P
C
(W)
5
5$7,1*S$1'&+$5$&7(5,67,&&859(6
7\SLFDO&KDUDFWHULVLWLFV
http://www.lujingsemi.com 2017.6ͲRev.A
Ϯ