2N3903
2N3904
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3903 and
2N3904 types are NPN silicon transistors designed for
general purpose amplifier and switching applications.
PNP complementary types are 2N3905 and 2N3906.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (T
A
=25°C) SYMBOL UNITS
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6.0
V
Continuous Collector Current I
C
200 mA
Power Dissipation P
D
625 mW
Operating and Storage Junction Temperature T
J
, T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
200 °C/W
ELECTRICAL CHARACTERISTICS: (T
A
=25°C) 2N3903 2N3904
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
CEV
V
CE
=30V, V
EB
=3.0V - 50 - 50 nA
BV
CBO
I
C
=10μA 60 - 60 - V
BV
CEO
I
C
=1.0mA 40 - 40 - V
BV
EBO
I
E
=10μA 6.0 - 6.0 - V
V
CE(SAT)
I
C
=10mA, I
B
=1.0mA - 0.2 - 0.2 V
V
CE(SAT)
I
C
=50mA, I
B
=5.0mA - 0.3 - 0.3 V
V
BE(SAT)
I
C
=10mA, I
B
=1.0mA 0.65 0.85 0.65 0.85 V
V
BE(SAT)
I
C
=50mA, I
B
=5.0mA - 0.95 - 0.95 V
h
FE
V
CE
=1.0V, I
C
=0.1mA 20 - 40 -
h
FE
V
CE
=1.0V, I
C
=1.0mA 35 - 70 -
h
FE
V
CE
=1.0V, I
C
=10mA 50 150 100 300
h
FE
V
CE
=1.0V, I
C
=50mA 30 - 60 -
h
FE
V
CE
=1.0V, I
C
=100mA 15 - 30 -
h
fe
V
CE
=10V, I
C
=1.0mA, f=1.0kHz 50 200 100 400
f
T
V
CE
=20V, I
C
=10mA, f=100MHz 250 - 300 - MHz
C
ob
V
CB
=5.0V, I
E
=0, f=100kHz - 4.0 - 4.0 pF
C
ib
V
EB
=0.5V, I
C
=0, f=100kHz - 8.0 - 8.0 pF
NF V
CE
=5.0V, I
C
=100μA, R
S
=1.0kΩ
f=10Hz to 15.7kHz - 6.0 - 5.0 dB
t
on
V
CC
=3.0V, V
BE(OFF)
=0.5V, I
C
=10mA
I
B1
=1.0mA - 70 - 70 ns
t
off
V
CC
=3.0V, I
C
=10mA, I
B1
=I
B2
=1.0mA - 225 - 250 ns
R2 (12-October 2011)
www.centralsemi.com
