0.4
+0.1
-0.1
2.9
+0.1
-0.1
0.95
+0.1
-0.1
1.9
+0.1
-0.1
2.4
+0.1
-0.1
1.3
+0.1
-0.1
0-0.1
0.38
+0.1
-0.1
0.97
+0.1
-0.1
0.55
0.4
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1
+0.05
-0.01
66
Features
ƔCollector Power Dissipation: PC=0.3W
ƔCollector Current: I
C=1.5A
Parameter Symbol Rating Unit
Collector-Base Voltage V
CBO 40 V
Collector-Emitter Voltage V
CEO 25 V
Emitter-Base Voltage V
EBO 5V
Collector Current -Continuous I
C 1.5 A
Collector Power Dissipation P
C 0.3 W
Junction Temperature T
j 150
℃
Storage Temperature T
stg -55 to 150
℃
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V
(BR)CBO IC = 100 μA , IE = 0 40 V
Collector-emitter breakdown voltage V
(BR)CEO IC = 1mA , IB = 0 25 V
Emitter-base Breakdown voltage V
(BR)EBO IE = 100 μA , IC = 0 5 V
Collector-base cut-off current I
CBO VCB = 40 V , IE = 0 0.1 μA
Collector-emitter cut-off current I
CEO VCE = 20 V , IB = 0 0.1 μA
Emitter-base cut-off current I
EBO VEB = 5 V , IC = 0 0.1 μA
V
CE = 1 V , IC = 100 mA 200 350
V
CE = 1 V , IC = 800 mA 40
Collector-emitter saturation voltage V
CE(sat) IC = 800 mA , IB = 80 mA 0.5 V
Base-emitter saturation voltage V
BE(sat) IC = 800 mA , IB = 80 mA 1.2 V
Transition frequency f
T VCE = 10 V , IC = 50 mA , f = 30 MHz 100 MHz
DC current gain h
FE
■ Marking
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