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Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 160 V
V
CEO
Collector-Em itter Voltage 160 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current-Continuous 1 A
P
C
Collector Power Dissipation 0.75 W
T
J
Junction Temperature 150 ć
T
stg
Storage Temperature -55~+150 ć
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V
(BR)CBO
I
C
=100μA ,I
E
=0 160 V
Collector-emitter breakdown voltage V(
BR)CEO
I
C
=10mA ,I
B
=0 160 V
Emitter-Base breakdown voltage V
(BR)EBO
I
E
=10μA , I
C
=0 6 V
Colle ctor cut -o ff current I
CBO
V
CB
=150V,I
E
=0 1 μA
Colle ctor cut -o ff current I
CER
V
CB
=150V,R
EB
=10MΩ 10 μA
Emitter cut-off current I
EBO
V
EB
=6V,I
C
=0 1 μA
DC current gain
h
FE(1)
V
CE
=5V,I
C
=200mA 60 250
h
FE(2)
V
CE
=5V,I
C
=10mA 40
Collector-emitter saturation voltage V
CE(sat)
I
C
=500mA, I
B
=50mA 1 V
Base-emitter voltage V
BE
I
C
=5mA, V
CE
=5V 0.75 V
Transition frequency f
T
V
CE
=5V,I
C
=200mA 20 MHz
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