0.4

+0.1

-0.1

2.9

+0.1

-0.1

0.95

+0.1

-0.1

1.9

+0.1

-0.1

2.4

+0.1

-0.1

1.3

+0.1

-0.1

0-0.1

0.38

+0.1

-0.1

0.97

+0.1

-0.1

0.55

0.4

12

3

Unit: mm

SOT-23

0.1

+0.05

-0.01

1. Gate

2. Source

3. Drain

Parameter Symbol Rating Unit

Drain-SourceVoltage

V

DS

100

Gate-SourceVoltage

V

GS

±20

ContinuousDrainCurrent

I

D

0.17

PulsedDrainCurrent

I

DM

0.68

PowerDissipation

P

D

0.36 W

DerateAbove25°C

2.8

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R

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350 °C/W

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T

J

150

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T

stg

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A

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Parameter Symbol

TestConditions

Min Typ Max Unit

Drain-SourceBreakdownVoltage

V

DSS

I

D

=250 A, V

GS

=0V

100 V

1

V

DS

=100V, V

GS

=0V

V

DS

=100V, V

GS

=0V,T

J

=55

60

Gate-BodyLeakageCurrent

I

GSS

V

DS

=0V, V

GS

=±20V

±10

GateThresholdVoltage

V

GS(th)

V

DS

=V

GS

,I

D

=1mA 0.8 V

6

V

GS

=10V, I

D

=0.17A

V

GS

=10V, I

D

=0.17A T

J

=125

12

10

V

GS

=4.5V, I

D

=0.17A

OnStateDrainCurrent

I

D(ON)

V

GS

=10V,V

DS

=5V

0.68 A

ForwardTransconductance

g

FS

V

DS

=10V, I

D

=0.17A

0.08 S

InputCapacitance

C

iss

73

OutputCapacitance

C

oss

7

ReverseTransferCapacitance

C

rss

3.4

GateResistance

R

g

2.2

V

GS

=15mV,f=1MHz

TotalGateCharge

Q

g

1.8 2.5

GateSourceCharge

Q

gs

0.2

GateDrainCharge

Q

gd

0.3

Turn-OnDelayTime

t

d(on)

1.7 3.4

Turn-OnRiseTime

t

r

9

Turn-OffDelayTime

t

d(off)

17 31

Turn-OffFallTime

t

f

2.4 5

BodyDiodeReverseRecoveryTime

t

rr

11

BodyDiodeReverseRecoveryCharge

Q

rr

3

MaximumBody-DiodeContinuousCurrent

I

S

0.17 A

DiodeForwardVoltage

V

SD

V1.3I

S

=0.34A,V

GS

=0V

ns

ZeroGateVoltageDrainCurrent

I

DSS

A

V

DD

=30V,I

D

=0.28A,

V

GS

=10V,R

GEN

=6

R

DS(O

n

)

StaticDrain-SourceOn-Resistance

I

F

=0.17A, d

I

/d

t

=100A/ s

V

GS

=0V, V

DS

=25V, f=1MHz

V

GS

=10V, V

DS

=30V, I

D

=0.22A

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3.0V

2.5V

6.0V

4.5V

3.5V

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D

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GS

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2.2

2.6

3

3.4

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T

A

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C

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C

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C

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DS

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