Zener Voltage
Reverse Carrent
Dynamic Resistance
Vz(V)
Test Condition
Ir(uA)
Test Condition
rd(ȍ)
Test Condition
TYPE
Min. Max. Iz(mA) Max. Vr(V) Max. Iz(mA)
BZX55C 2V0 1.80 2.15 5.0 100 1.0 85 5.0
BZX55C 2V2 2.08 2.33 5.0 75 1.0 85 5.0
BZX55C 2V4 2.28 2.56 5.0 50 1.0 85 5.0
BZX55C 2V7 2.50 2.90 5.0 10 1.0 85 5.0
BZX55C 3V0 2.80 3.20 5.0 4 1.0 85 5.0
BZX55C 3V3 3.10 3.50 5.0 2 1.0 85 5.0
BZX55C 3V6 3.40 3.80 5.0 2 1.0 85 5.0
BZX55C 3V9 3.70 4.10 5.0 2 1.0 85 5.0
BZX55C 4V3 4.00 4.60 5.0 1 1.0 75 5.0
BZX55C 4V7 4.40 5.00 5.0 0.5 1.0 60 5.0
BZX55C 5V1 4.80 5.40 5.0 0.1 1.0 35 5.0
BZX55C 5V6 5.20 6.00 5.0 0.1 1.0 25 5.0
BZX55C 6V2 5.80 6.60 5.0 0.1 2.0 10 5.0
BZX55C 6V8 6.40 7.20 5.0 0.1 3.0 8 5.0
BZX55C 7V5 7.00 7.90 5.0 0.1 5.0 7 5.0
BZX55C 8V2 7.70 8.70 5.0 0.1 6.2 7 5.0
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http://www.lujingsemi.com 2017.6ͲRev.A
1
0.079(2.0)
MAX
0.020(0.52)
TYP
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MAX
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Zener Voltage
Reverse Carrent
Dynamic Resistance
Vz(V)
Test Condition
Ir(uA)
Test Condition
rd(ȍ)
Test Condition
TYPE
Min. Max. Iz(mA) Max. Vr(V) Max. Iz(mA)
BZX55C 9V1 8.50 9.60 5.0 0.1 6.8 10 5.0
BZX55C 10 9.40 10.60 5.0 0.1 7.5 15 5.0
BZX55C 11 10.40 11.60 5.0 0.1 8.2 20 5.0
BZX55C 12 11.40 12.70 5.0 0.1 9.1 20 5.0
BZX55C 13 12.40 14.10 5.0 0.1 10.0 26 5.0
BZX55C 15 13.80 15.60 5.0 0.1 11.0 30 5.0
BZX55C 16 15.30 17.10 5.0 0.1 12.0 40 5.0
BZX55C 18 16.80 19.10 5.0 0.1 13.0 50 5.0
BZX55C 20 18.80 21.20 5.0 0.1 15.0 55 5.0
BZX55C 22 20.80 23.30 5.0 0.1 16.0 55 5.0
BZX55C 24 22.80 25.60 5.0 0.1 18.0 80 5.0
BZX55C 27 25.10 28.90 5.0 0.1 20.0 80 5.0
BZX55C 30 28.00 32.00 5.0 0.1 22.0 80 5.0
BZX55C 33 31.00 35.00 5.0 0.1 24.0 80 5.0
BZX55C 36 34.00 38.00 5.0 0.1 27.0 80 5.0
BZX55C 39 37.00 41.00 2.5 0.1 30.0 90 2.5
BZX55C 43 40.00 46.00 2.5 0.1 33.0 90 2.5
BZX55C 47 44.00 50.00 2.5 0.1 36.0 110 2.5
BZX55C 51 48.00 54.00 2.5 0.1 39.0 125 2.5
BZX55C 56 52.00 60.00 2.5 0.1 43.0 135 2.5
BZX55C 62 58.00 66.00 2.5 0.1 47.0 150 2.5
BZX55C 68 64.00 72.00 2.5 0.1 51.0 200 2.5
BZX55C 75 70.00 79.00 2.5 0.1 56.0 250 2.5
Notes:
1) Tested with pulses tp = 20 ms.
2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
3) The BZX55-C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”. Connect the
cathode lead to the neg ative pole.
4) VF(Max)=1.20V@ IF=100mA
Breakdown characteristics Tj = constant (pulsed)
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http://www.lujingsemi.com 2017.6ͲRev.A
2