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http://www.lujingsemi.com
2017.6ͲRev.A
1
+-
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Symbol Parameter Value Unit
V
RM
100 V
V
R
V
RR
M
V
RW
M
75 V
V
R(
RMS)
53 V
I
O
150 mA
I
FM
300 mA
2
A
I
FSM
P
D
150 m
W
R
ΘJ
A
833
℃/W
T
j
150
℃
T
s
tg
N
on-Repetitive Peak Reverse Voltage
R
everse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Ave
rage Rectified Output Current
Fo
rward Continuous Current
Non-repetitive Peak Forward Surge Current@t=
8.3ms
P
ower Dissipation
Thermal Resistance from Junction to Ambient
Ju
nction Temperature
Storage Temperature -55~+150
℃
Parameter Symbol Test conditions Min Typ Max Unit
Reverse voltage
V
(BR)
I
R
=1A
75 V
V
R
=75V 1 A
Reverse current
I
R
V
R
=20V 25 nA
I
F
=1mA
0.715
V
I
F
=10mA
0.855
V
I
F
=50mA
1
V
Forward voltage
V
F
I
F
=150mA
1.25
V
Total capacitance
C
tot
V
R
=0V,f=1MHz 2 pF
Reverse recovery time
t
rr
I
F
= I
R
=10mA, I
rr
=0.1*I
R
,R
L
=100¡
4 ns
7\SLFDO&KDUDFWHULVWLFV
0
25 50 75 100 125 150
0
50
100
150
200
0.0
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
02
0406080
1
10
100
1000
0
5101520
0.8
0.9
1.0
1.1
1.2
Forward C haracteristics
Reverse Characteristics
Power Derating Curve
POWER DISSIPATION P
D
(mW)
AMBIENT TEMPERATURE T
a
( )
ć
T
a
=
1
0
0
ć
T
a
=
2
5
ć
FORWARD CURRENT I
F
(mA)
FORWARD VOLTAGE V
F
(V)
200
T
a
=100
ć
T
a
=25ć
REVERSE CURRENT I
R
(nA)
REVERSE VOLTAGE V
R
(V)
T
a
=25ć
f=1MHz
Capacitance C haracteristics
REVERSE VOLTAGE V
R
(V)
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
5$7,1*6 $1' &+$5$&7(5,67,& &859(6
http://www.lujingsemi.com
2017.6ͲRev.A
Ϯ