6666
http://www.lujingsemi.com 2017.6ͲRev.A
1
6&+277.< %$55,(5 5(&7,),(5 92/7$*( 5$1*( 9 &855(17 $
)($785(6 60$
ƔPlastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing
ƔFor surface mounted applications
ƔMetal silicon junction,majority carrier conduction
ƔLow power loss,high efficiency
ƔBuilt-in strain relief,ideal for automated placement
ƔHigh forward surge current capability
ƔHigh temperature soldering guaranteed:260 ć/10 seconds at
terminals
ƔComponent in accordance to RoHS 2002/95/Ec and WEEE
2002/96/EC
0(&+$1,&$/ '$7$
ƔCase: SMA molded plastic body
ƔPolarity:Color band denotes cathode end
ƔMounting Position:Any
0$;,080 5$7,1*6 $1' &+$5$&7(5,67,&6
@ 25°C Ambient Temperature (unle ss oth erwise noted)Single phase,half wave,60 Hz,resistive or inductive load.
For capacitive load,derate by 20%.
TYPE NUMBER
SYMBOL
SS12 SS13 SS14 SS15 SS16 SS18 SS110 SS115 SS120 UNITS
Maximum recurrent peak reverse voltage
V
RRM
20 30 40 50 60 80 100 150 200
V
Maximum RMS voltage
V
RMS
14 21 28 35 42 56 70 105 140
V
Maximum DC blocking voltage
V
DC
20 30 40 50 60 80 100 150 200
V
Maximum Average Forward rectified
Current0.375"(9.5mm) lead length
I
F(AV)
1.0
A
Peak forw ard surge current 8.3ms single half sine-w ave
superimposed on rated load
I
FSM
30.0
A
Maximum instantaneous forward voltage at 1.0 A(Note1)
V
F
0.45 0.55 0.70 0.85
V
Maximum reverse current
at rated DC blocking voltage perdiode
@T
A
=25
ć
I
R
0.5
mA
@T
A
=100ć
6.0 5.0
Typical Thermal Resistance (Note 2)
R
©
JA
88.0
ć
/W
Typical junction capacitance(Note 3)
C
j
110 90
P
F
Storage Temperature
T
STG
-----+150
ć
Operation Junction Temperature
T
j
- 65 ---- + 125
-65 to +150
ć
NOTE:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
0$;
'LPHQVLRQVLQLQFKHVDQGPLOOLPHWHUV