Features
● Fast Switching Device (TRR <4.0 nS)
●Power Dissipation of 500mW
●High Stability and High Reliability
●Low reverse leakage
Mechanical Data
●Case: DO-35 Glass Case
●Polarity: Color band denotes cathode end
●Mounting Position: Any
Parameters Symbol
Value
Unit
Reverse Voltage
V
R 75 V
Peak Reverse Voltage
V
RM 100 V
Power Dissipation
Pd 500 mW
Operating junction temperature
Tj 175
℃
Storage temperature range
Ts -65-+200
℃
Working Inverse Voltage
W
IV 75 V
Average Rectified Current
I
O 150 mA
Non-repetitive Peak Forward Current
I
FM 450 mA
@ t<1s and Tj=25℃
Valid provided that leads at a distance of 8 mm from case are
kept at ambient temperature.
Limits
Symbols Parameter
Test Condition
Min Max
Unit
IR=100uA 100
BV
Breakdown Voltage
IR=5uA 75
V
VR=20V --- 25 nA
IR
Reverse Leakage Current
VR=75 --- 5 uA
1N4448/1N914B IF=5mA 0.62 0.72
Forward Voltage
1N4148 IF=10mA --- 1
VF
1N4448/1N914B IF=100mA --- 1
V
IF= 10mA, IR=1.0mA
Reverse Recovery Time
RL=100Ω
TRR
IRR=1mA
--- 4 nS
C
Capacitance
VR=0V, f=1MHZ --- 4 pF
1N4148
DO-35 Glass Switching Diode
VOLTAGE RANGE: 75V
PEAK PULSE POWER:500mW
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified
Electrical Specification (TA=25℃ unless otherwise specified)
http://www.lujingsemi.com 2017.6‐Rev.A
1
0.079(2.0)
MAX
0.020(0.52)
TYP
0.165 (4.2)
MAX
1.0 2(26.0)
MIN.
1.0 2(26.0)
MIN.
Dimensions in inches and (millimeters)
DO-35(GLASS)
Forward characteristics
Dynamic forward resistance versus forward current
Admissible power dissipation versus ambient temperature
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Relative capacitance versus reverse voltage
Leakage current versus junction temperature
Admissible repetitive peak forward current versus pulse duration Valid provided that
leads at a distance of 8 mm from case are kept at ambient temperature
Typical Characteristics
RATINGS AND CHARACTERISTIC CURVES
http://www.lujingsemi.com 2017.6‐Rev.A
2