MUR1010D – MUR1060D
10
.0A V
V
1.0
70 140 210 280 350 420 V
100 200 300 400 500 600 V
G
lass Passivated Die Construction
Low Forward Voltage Drop
High Surge Current Capability
10.
0A GLASS PASSIVATED SUPERFAST RECTIFIER
Features
!
!
S
u
p
e
r-Fast Switching
!
!
Low Reverse Leakage Current
!
!
Plastic Material has UL Flammability
Classification 94V-O
Me
chanical Data
Maximum R
atings and Electrical Characteristics
@T
A
=2
5°
C
unl
ess ot
herw
i
s
e specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derat e current by 20%.
Characteristic Symbol Unit
P
eak Repetitive Revers e Voltage
Working P eak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
RM
S Reverse Voltage V
R(RM
S)
A
v
erage
Rec
t
i
f
i
ed Output Current @T
C
=
100°
C
I
O
10.0
A
Non-Repetitive Peak Forward Surge Current 8. 3ms
Singl e hal f sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
90 A
Forward V
oltage @I
F
=
FM
Pe
ak Reverse Current @T
A
= 25°
C
At Rated DC Blocking Voltage @T
A
= 100
°C
I
RM
5.0
400
µA
Revers
e Recovery Time (Note 1) t
rr
35
nS
Typical
Junction Capacitance
(Note 2)
C
j
200
pF
Operat
ing and Storage Temperature Range T
j
, T
STG
-55 to +150 °
C
Note:
1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse volt age of 4.0V D.C.
1 of 2
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
1.
3 1.7
MUR1010D – MUR1060D
Mo
unting Position: Any
Polarity: See Diagram
Terminals: Plated Leads Solderable per
Lead Free: For RoHS / Lead Free Version
!
MIL-STD- 202, Met hod 208
!
!
!
Cas
!
e: TO-263AC(D PAK), Molded Plastic
2
All Dimensions in millimeter
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
9.80
10.20
10.60
9.60
8.50 9.20
1.67----
0.51
1.01
2.10 2.50
2.44
2.64
1.10
4.70
K
J
I
1.40
4.40
0.640.30
4.40 4.80
D PAK/TO-263
2
K
J
I
H
F
D
C
A
G
E
B
D PAK/TO-263AC
2
105 0D
1010D 1030D1020D 1040D
1060D
MUR MUR MUR MUR MUR MUR
30
60
90
0
120
150
180
1 10 100
I
, PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER
OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3
ms single half-sine-wave
JEDEC method
10
100
400
0.1
1.0 10 100
V
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
C
, CAPACITANCE (pF)
j
0.1
1.0
10
100
0.2 0.6 1.0
1.4
I
, INSTANTANEOUS FORWARD CURRENT (A)
F
V
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
Pulse
width = 300 s
2% duty cycle
µ
1050-1060
1030-1040
1010-1020
2 of 2
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
0
2
4
6
8
10
0 50 100 150
I
, AVERAGE FORWARD CURRENT (A)
(A
V)
T
, CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
°
1010-1020
1030-1060
MUR1010D – MUR1060D
MUR1010D – MUR1060D
50V DC
Approx
50
NI (Non-inductive)Ω
10 NIΩ
1.0
NI
Ω
Oscilloscope
(Note
1)
Pulse
Generator
(Note
2)
Device
Under
Test
t
rr
Settimebasefor5
/10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Ω
Ω
Fig.
5 Reverse
Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)