MURD810 – MURD860
8
.0A V
V
1.0
70 140 210 280 350 420 V
100 200 300 400 500 600 V
85 0
810
G
lass Passivated Die Construction
Low Forward Voltage Drop
High Surge Current Capability
8.0A
GLASS PASSIVATED SUPERFAST RECTIFIER
Features
!
!
S
u
p
e
r-Fa
s
t
Switching
!
!
Low Reverse Leakage Current
!
!
Plastic Material has UL Flammability
Classification 94V-O
Mec
hanical Data
Maximum Rat
ings and Electrical Characteristics
@T
A
=2
5°
C
unl
ess ot
herw
i
s
e s
pe
c
i
f
ied
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derat e current by 20%.
Characteristic Symbol Unit
Peak
Repetitive Reverse Voltage
Working P eak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
RMS
Reverse Voltage V
R(RMS)
A
v
erage
Rec
t
i
f
i
ed
Ou
t
put
Current @T
C
=
100°
C
I
O
8.0
A
Non-Repetitive Peak Forward Surge Current 8. 3ms
Singl e hal f sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
90 A
Forward Vol
tage @I
F
=
FM
Pea
k Reverse Current @T
A
= 25°C
A
t Rated DC Blocking Voltage @T
A
= 100°
C
I
RM
2.0
400
µA
Reverse Rec
overy Time (Note 1) t
rr
35
nS
Typical
Junction Capacitance
(Note 2)
C
j
80
50
pF
Operati
ng and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Note: 1.
Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse volt age of 4.0V D.C.
1 of 2
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
Mou
nting Position: Any
Polarity: See Diagram
minals: Plated Leads Solderable per
Case: TO-252AC(DPAK), Molded Plastic
!
!
Ter
MIL-STD- 202, Met hod 208
!
!
Weight: 2.24 grams (approx.)
!
!
Lead Free: For RoHS / Lead Free Version
830820 840
860
1.3 1.7
MURD810 – MURD860
All Dimensions in millimeter
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
6.30
6.80
5.50
5.10
5.90 6.30
0.51
0.90
1.38 1.75
2.19
2.39
0.40
3.30
I
0.61
2.90
DPAK/TO-252
K
J
I
H
F
D
A
G
E
B
C
K
J
0.610.40
2.20 2.40
0.88 1.28
DPAK/TO-252AC
MURD MURD MURD MURD MURD MURD
30
60
90
0
120
150
180
1 10 100
I ,
PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF
CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3 ms
single half-sine-wave
JEDEC method
10
100
400
0.1
1.0 10 100
V ,
REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
C,
CAPACITANCE (pF)
j
0.1
1.0
10
100
0.2 0.6 1.0 1.4
I ,
INSTANTANEOUS FORWARD CURRENT (A)
F
V ,
INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
Pulse width
= 300 s
2% duty cycle
µ
850-860
830-840
810-820
2 of 2
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
0
2
4
6
8
10
0 50 100 150
I ,
AVERAGE FORWARD CURRENT (A)
(AV)
T ,
CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
°
810-820
830-860
MURD810 – MURD860
MURD810 – MURD860
50V DC
Approx
50
NI (Non-inductive)Ω
10 NIΩ
1.0
NI
Ω
Oscilloscope
(Note
1)
Pulse
Generator
(Note
2)
Device
Under
Test
t
rr
Settimebasefor5
/10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Ω
Ω
Fig.
5 Reverse
Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)