P
olarity: See Diagram
Case: TO-220AB, Molded Plastic
Mounting Position: Any
Terminals: Plated Leads Solderable per
High Surge Current Capability
Low Forward Voltage Drop
Glass Passivated Die Construction
MUR1010CT – MUR1060CT
10.
0A GLASS PASSIVATED SUPERFAST RECTIFIER
Features
!
!
S
upe
r-Fast Switching
!
!
Low Reverse Leakage Current
!
!
Plastic Material has UL Flammability
Classification 94V-O
Me
chanical Data
!
!
MIL-
STD-202, Method 208
!
!
Weight: 2.24 grams (approx.)
!
!
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
!
Lead Free: For RoHS / Lead Free Version
Maximum R
atings and Electrical Characteristics
@T
5°
C
unl
ess ot
herwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derat e current by 20%.
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse volt age of 4.0V D.C.
1 of 2
MUR1010CT – MUR1060CT
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
TO-220AB
5
.0A V
V
1.0
70 140 210 280 350 420 V
MUR MUR MUR MUR MUR
100 200 300 400 500 600 V
105 0CT
1010CT
Characteristic Symbol
MUR
Unit
P
eak Repetitive Revers e Voltage
Working P eak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
RM
S Reverse Voltage V
R(RM
S)
A
v
erage
Rec
t
i
f
i
ed Output Current @T
C
=
100°
C
I
O
10.0
A
Non-Repetitive Peak Forward Surge Current 8. 3ms
Singl e hal f sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
90 A
Forward V
oltage @I
F
=
FM
Pe
ak Reverse Current @T
A
= 25°
C
At Rated DC Blocking Voltage @T
A
= 100
°C
I
RM
5.0
400
µA
Revers
e Recovery Time (Note 1) t
rr
170
nS
Typical
Junction Capacitance
(Note 2)
C
j
pF
Operat
ing and Storage Temperature Range T
j
, T
STG
-55 to +150 °
C
1030CT1020CT
1040CT
1060CT
1.
3 1.7
130
35
L
M
A
N
P
D
E
K
C
B
G
123
J
HH
P
i
n1+
P
i
n3+
Pin2-
Case
+
TO-220AB
Dim Min Max
A
14.22 15.88
B
9.57 10.57
C
2.54 3.43
D
5.80
6.80
E
¾ 6.35
G
12.70
14.73
H
2.29 2.79
J
0.51 1.14
K
3.53Æ 4.14Æ
L
3.56 4.83
M
1.07 1.47
N
0.30 0.64
P
2.03 2.92
All Dimensions in mm
30
60
90
0
120
150
180
1 10 100
I
, PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER
OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3
ms single half-sine-wave
JEDEC method
10
100
400
0.1
1.0 10 100
V
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
1030
-
1060
101
0
-1020
C
, CAPACITANCE (pF)
j
0.1
1.0
10
100
0.2 0.6 1.0
1.4
I
, INSTANTANEOUS FORWARD CURRENT (A)
F
V
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
Pulse
width = 300 s
2% duty cycle
µ
1060
103
0 - 1040
1010
-1020
MUR1010CT – MUR1060CT
2 of 2
MUR1010CT – MUR1060CT
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
0
2
4
6
8
10
0 50 100 150
I
, AVERAGE FORWARD CURRENT (A)
(A
V)
T
, CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
°
50V
DC
Approx
50 NI (Non-inductive)Ω
10 NIΩ
1.0
NI
Ω
Oscilloscope
(Note 1)
Pulse
Generator
(Note
2)
Device
Under
Test
t
rr
Settimebasefor5/10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise
Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Ω
Ω
Fig. 5 Reverse
Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)