1.0
A SURFACE MOUNT SCHOTTKY BARRIER DIODE
SS12 – SS120
Feat
ures
!
Schottky Barrier Chip
!
Ideally Suited for Automatic Assembly B
!
Low Power Loss , High Eff iciency
!
!
For Use in Low Voltage Application A
!
Guard Ring Die Construction F
!
Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
M
echanical Data
!
C
ase: SMA/DO-214AC, Molded Plastic
!
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
Weight: 0.064 grams (approx.)
!
Lead Free: For RoHS / Lead Free Version
M
aximum Ratings and Electrical Characteristics
@T
A
=2
5°C unless otherwise specified
S
MA/DO-214AC
Di
m Min Max
A
2.
50 2.90
B
4.
00 4.60
C
1.
20 1.60
D
0.
152 0.305
E
4.
80 5.28
F
2.
00 2.44
G
0.
051 0.203
H
0.
76 1.52
A
ll Dimensions in mm
1 of 2
SS12 – SS120
Surge Overload Rating to 30A Peak D
Ch
aracteristic
www.senocn.com
Zibo Seno Electronic Engineering Co.,Ltd.
Typic al Junction Capacitance
0.55 0.70 0.85 0.95 V
1.0 A
14 21 28 35 42 56 70 105 140 V
20 30 40 50 60 80 100 150 200 V
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RW
M
V
R
RMS Reverse Voltage V
R(
RMS)
A
verage Rectified Output Current @T
L
=
75°C I
O
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method)
I
FS
M
30 A
Forward V
oltage @I
F
= 1
.0A V
FM
P
eak Reverse Current @T
A
=
25°C
At Rate d DC Blocking Voltage @T
A
=
100°C
I
RM
0.
5
20
mA
R
JL
R
JA
28
88
°C
/W
Operat
i
ng
T
emperature Range T
j
-55 t
o +150 °
C
S
torage T
emperature Range T
ST
G
-55 t
o +150 °C
Typic al Therm al Resistance (Note 1)
j
C
110 30
110
pF
Symbol SS12 SS13 SS14 SS15 SS16 SS18 SS110 SS115 SS120 Unit
SS12 – SS120
SS12 – SS120
2 of 2
www.senocn.com
Zibo Seno Electronic Engineering Co.,Ltd.
0.01
0.1
1.0
10
0
0.4 0.8 1.2
I
,
INSTANTANEOUS FORWARD CURRENT (A)
F
V
, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
F
SS12 - SS14
SS15 - SS16
T
- 25ºC
j
I
Pulse Width = 300 s
F
µ
10
100
1000
0.1 1
10 100
C, JUNCTION
CAPACITANCE (pF)
j
V
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T
= 25°C
f = 1 MHz
j
0
20
40
60
80
100
120
140
I ,
INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT
OF RATED PEAK REVERSE VOLTAGE (%)
T
= 100ºC
j
T
= 75ºC
j
T
= 25ºC
j
100
10
1.0
0.1
0.01
0.001
0
1.0
25
50 75 100 125 150
I A
VERAGE FORWARD CURRENT (A)
(AV),
T, LEAD TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
L
SS
18 - SS110
0
10
20
30
40
50
1
10 100
I
, PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER
OF
CYCLES
AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single
Half-Sine-Wave
(JEDEC Method)
T =
100 C
j
°
SS115-SS120