Sy
mbol SS12F SS13F SS14F SS15F SS16F SS18F SS110F SS150F SS120F Unit
C
ase: SMAF, Molded Plastic
Weight: 0.037 grams (approx.)
C
haracteristic
S
urge Overload Rating to 30A Peak
Guard Ring Die Construction
Classification Rating 94V-O
Ideally Suited for Automatic Assembly
For Use in Low Voltage Application
1.0A
SURFACE MOUNT SCHOTTKY BARRIER DIODE
SS12F- SS120F
Features
!
Sc
hottky Barrier Chip
!
!
Low Power Loss, High Eff icienc y
!
!
!
!
Plastic Case Material has UL Flammability

Mechanic
al Data
!
!
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
!
Lead Free: For RoHS / Lead Free Version
Maximum R
atings and Electrical Characteristics
@T
A
=25°
C unless otherwise specified
Note:
1. Mounted on P.C. Board with 5.0mm
2
copper pad
area.
1 of 2
SS12F-SS120F
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
SM
AF
3.60
3.20
2.80
2.40
Dim
Min Max
A
B
C
D
E
F
G
All D
imensions in mm
0.20
0.10
4.80
4.40
1.10
0.90
0.90
-
1.43
1.38
A
B
C
D
F
E
G
Typical Junction Capacitance
0.55 0.70 0.85 0.95 V
1.0 A
14 21 28 35 42 56 70 105 140 V
20 30 40 50 60 80 100 150 200 V
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RW
M
V
R
RMS Reverse Voltage V
R(
RMS)
A
verage Rectified Output Current @T
L
=
75°C I
O
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method)
I
FS
M
30 A
Forward V
oltage @I
F
= 1
.0A V
FM
P
eak Reverse Current @T
A
=
25°C
At Rate d DC Blocking Voltage @T
A
=
100°C
I
RM
0.
1
20
mA
R
JL
R
JA
28
88
°C
/W
Operat
i
ng
T
emperature Range T
j
-55 t
o +150 °
C
S
torage T
emperature Range T
ST
G
-55 t
o +150 °C
Typical Therm al Res istance (Note 1)
j
C
110 30
110
pF
SS12F- SS120F
SS12F-SS120F
2 of 2
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
0.01
0.1
1.0
10
0
0.4 0.8 1.2
I
,
INSTANTANEOUS FORWARD CURRENT (A)
F
V
, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
F
SS12F-SS14F
SS15F-SS16F
T
- 25ºC
j
I
Pulse Width = 300 s
F
µ
10
100
1000
0.1 1
10 100
C, JUNCTION
CAPACITANCE (pF)
j
V
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T
= 25°C
f = 1 MHz
j
0
20
40
60
80
100
120
140
I ,
INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT
OF RATED PEAK REVERSE VOLTAGE (%)
T
= 100ºC
j
T
= 75ºC
j
T
= 25ºC
j
100
10
1.0
0.1
0.01
0.001
0
1.0
25
50 75 100 125 150
I A
VERAGE FORWARD CURRENT (A)
(AV),
T, LEAD TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
L
SS
18F-SS110F
0
10
20
30
40
50
1
10 100
I
, PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER
OF
CYCLES
AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single
Half-Sine-Wave
(JEDEC Method)
T =
100 C
j
°
SS115F-SS120F