S
ymbol SS12W SS13W SS14W SS15W SS16W SS18W SS110W SS115W SS120W Unit
We
ight: 0.01 grams (approx.)
Case: SOD-123FL, Molded Plastic
Surge Overload Rating to 20A Peak
Classification Rating 94V-O
Guard Ring Die Construction
For Use in Low Voltage Application
Ideally Suited for Automatic Assembly
SS12W – SS120W
1.0A SU
RFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
Schottk
y Barrier Chip
!
!
Low Power Loss, High Effic ienc y
!
!
!
!
Plastic Case Material has UL Flammability
Mechanical D
ata
!
!
T
erminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
!
Lead Free: For RoHS / Lead Free Version
Maximum Ra
tings and Electrical Characteristics
@T
A
=25°C
unless otherwise specifi ed
Note: 1. Mounted on P.C. Board with 5.0mm
2
copper pad area.
1 of 2
SS12W – SS120W
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
T
ypical Junction Capacitance
0.55 0.70 0.85 0.95 V
1.0 A
14 21 28 35 42 56 70 105 140 V
20 30 40 50 60 80 100 150 200 V
Peak Repetit i ve Revers e Voltage
Working P eak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
RM
S Reverse Voltage V
R(RMS)
Average
Rectified Output Current @T
L
= 75°C
I
O
Non-Repet
itive Peak Forward Surge Current
8.3m s S i ngl e half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
20 A
Forward V
oltage @I
F
= 1
.0A V
FM
Peak
Reverse Current @T
A
= 25°C
At Rated DC Blocki ng Voltage @T
A
= 100°C
I
RM
0.2
20
mA
R
JL
R
JA
28
88
°C/W
Operat
i
ng
T
em
perature Range T
j
-55 t
o +150 °
C
S
torage
Temperature Range T
STG
-55 t
o +150 °C
Typical Thermal Resistance (Not e 1)
j
C
110 30
110
pF
C
haracteristic
1.
0
±
0.
2
2.
6
±
0.
2
1.
8±
0.2
C
at
hode Band
Top View
3.
6
±
0.
2
0.
7
±
0.
3
1.
0±
0.15
SOD - 123FL
Dimensions in millimeters
1.0±
0.15
0.01
0.1
1.0
10
0
0.4 0.8 1.2
I
,
INST
A
NT
ANEOUS FORWARD CURRENT (A)
F
V , INST
ANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
F
T - 25ºC
j
I Pu
lse Width = 300 s
F
µ
10
100
1000
0.1 1
10 100
C
, JUNCTION CAPACITANCE (pF)
j
V , REVERSE VOL
TAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25°C
f
= 1 MHz
j
0
20
40
60
80
100 120
140
I
, INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RA
TED PEAK REVERSE VOLTAGE (%)
Fi
g
. 5 T
ypical Reverse Characteristics
T = 100ºC
j
T = 75ºC
j
T = 25ºC
j
100
10
1.0
0.1
0.01
0.001
2 of 2
0
10
20
30
40
50
1
10 100
I , PEAK
FORWARD SURGE CURRENT (A)
FSM
NUMBER
OF
CYCLES
A
T
60
Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half-Sine-Wave
(JEDEC
Method)
T
= 100 C
j
°
SS12W – SS120W
12 - 14
15 - 16
18 - 110
SS12 – SS120W
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
115 - 120
0
1.0
25
50 75 100 125 150
I AVERAGE FOR
WARD CURRENT (A)
(AV),
T, LEAD TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
L