C
h
a
racteristic Symbol SB220 SB230 SB240 SB250 SB260 SB280 SB2100 SB2150 SB2200 Unit
SB220 – SB2200
2.0A SC
HOTTKY BARRIER DIODE
Features
!
Schottk
y Barrier Chip
!
Guard Ring Die Construction for
Transient Protection
!
High Current Capability A B A
!
Low Power Loss, High Eff iciency
!
High Surge Current Capability
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D
Mechanical D
ata
!
Case: DO
-15, Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD- 202, Met hod 208
!
Polarity: Cathode Band
!
Weight: 0.40 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
!
Lead Free: For RoHS / Lead Free Version
Maximum Ra
tings and Electrical Characteristics
@T
A
=25°C
unless otherwise specifi ed
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derat e current by 20%.
Note: 1. Valid provided that leads are kept at ambient temperat ure at a distanc e of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse volt age of 4.0V D.C.
1 of 2
SB220 – SB2200
2.
0 A
14 21 28 35 42 56 70 105 140 V
20 30 40 50 60 80 100 150 200 V
Peak
Repetitive Reverse Vol tage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
RMS
Reverse Voltage V
R(RMS)
Average
Rectified Output Current @T
L
= 75°C
I
O
Non-Repeti
tive Peak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method)
I
FSM
50 A
Forward
Voltage @I
F
=
2.0A V
FM
Peak
Reverse Current @T
A
= 25°C
At Rated DC Blocki ng Voltage @T
A
= 100°C
I
RM
mA
Ty
pical Thermal Resis tance (Note 1)
R
JL
R
JA
28
88
°C/W
Operating
Temperature Range T
j
°C
Storage
Temperature Range T
STG
°C
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
DO-15
Dim
Min Max
A
24.5
—
B
5.50
7.62
C
0.
60 0.80
D
2.
60
3.60
All D
imensions in mm
-55 t
o +150
-55 to +150
0.05
0.1
20
10
0.55 0.
70 0.85 0.90
V
0
10
20
30
40
50
1
10 100
I , PEAK
FORWARD SURGE CURRENT (A)
FSM
NUMBER
OF
CYCLES
AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half-Sine-Wave
(JEDEC
Method)
T = 100
C
j
°
10
100
1000
0.1
110
100
C , CAP
ACITANCE (pF)
j
V , REVERSE
VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
f=1.0MHz
T = 25
C
j
°
0
20 40 60
80 100 120 140
I,INSTANTANEOUSREVERSECURRENT(mA)
R
PERCENT OF RA
TED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
T = 100
C
j
°
T = 75
C
j
°
T = 25
C
j
°
100
10
1.0
0.1
0.01
1k
0.01
0.1
1.0
10
0 0.2 0.4
0.6 0.8 1.0
I , INST
ANTANEOUS FORWARD CURRENT (A)
F
V , INST
ANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
100
SB220-SB240
SB250-SB260
SB280-SB2200
SB220-SB240
SB250-SB2200
2 of 2
SB220 – SB2200
SB220 – SB2200
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
0
0.5
1.0
25 50 75
100 125 150
I AVERAGE
FORWARD CURRENT (A)
O,
T , LEAD
TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
L
°
1.5
2.0
2.5
3.0