1N5550 1N5553
1N5551 1N5554
1N5552
GLASS PASSIVATED
SILICON RECTIFIERS
3.0 AMP, 200 THRU 1000 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5550 series
types are silicon rectifiers mounted in a hermetically
sealed, glass passivated package designed for general
purpose applications where high reliability is required.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (T
A
=25°C unless otherwise noted)
SYMBOL 1N5550 1N5551 1N5552 1N5553 1N5554 UNITS
Peak Repetitive Reverse Voltage V
RRM
200 400 600 800 1000 V
DC Blocking Voltage V
R
200 400 600 800 1000 V
RMS Reverse Voltage V
R(RMS)
140 280 420 560 700 V
Average Forward Current (T
A
=55°C) I
O
3.0 A
Peak Forward Surge Current, tp=8.3ms I
FSM
100 A
Operating and Storage Junction Temperature T
J
, T
stg
-65 to +200 °C
Thermal Resistance (Note 1) Θ
JL
30 °C/W
ELECTRICAL CHARACTERISTICS: (T
A
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
V
R
=Rated V
RRM
1.0 μA
I
R
V
R
=Rated V
RRM
, T
A
=100°C 75 ��A
V
F
I
F
=3.0A (200V thru 600V) 1.0 V
V
F
I
F
=3.0A (800V thru 1000V) 1.1 V
BV
R
I
R
=50μA (1N5550) 240 V
BV
R
I
R
=50μA (1N5551) 460 V
BV
R
I
R
=50μA (1N5552) 660 V
BV
R
I
R
=50μA (1N5553) 880 V
BV
R
I
R
=50μA (1N5554) 1100 V
t
rr
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A (200V thru 600V) 2.0 μs
t
rr
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A (800V thru 1000V) 4.0 μs
Notes: (1) At 0.375 inch (9.52mm) lead length from body.
GPR-4AM CASE
R2 (27-February 2013)
www.centralsemi.com
