MBR30100PT
Dual High Voltage Schottky Rectifier
HUAKE semiconductors
2017.08
1
/3 编号：HK-WI-TD-004 版本/版次：B/0
●Features：
■Common Cathode Structure
■Low Power Loss and High Efficiency
■Low Forward Voltage Drop
■High Surge Capability
●Application:
■ High Frequency Switch
■ Free Wheeling,and Polarity Protection Applications
Absolute Maximum Ratings
(Tc=25C unless otherwise noted)
Symbol
Parameter
Value
Unit
V
RRM
Maximum Repetitive Reverse Voltage
100
V
V
R
Maximum DC Reverse Voltage
100
V
I
F(AV)
Average Rectified Forward Current, Tc=120C
15(Per Leg)
30(Per Device)
A
I
FSM
Peak Forward Surge Current,8.3ms Half Sine wave
250
A
Tj
Operating Junction Temperature
150
C
Tstg
Storage Temperature Range
-55 to+150
C
Thermal Characteristics
(Tc=25C unless otherwise noted)
Symbol
Parameter
Max
Unit
R
θJC
Thermal Resistance,Junction to Case Per Leg
1.4
C /W
R
θJA
Thermal Resistance,Junction to Ambient Per Leg
59
C /W
Electrical Characteristics(Tc=25
C unless otherwise noted)
Symbol
Parameter
Test Conditons
Min
Max
Unit
V
RRM
Maximum Repetitive
Reverse Voltage
IR=100μA
100
V
I
R
Reverse Current
VR =100V Tc=25C
VR =100V Tc=125
C
0.1
5
mA
VF
Forward Voltage
IF=15A Tc=25C
IF=15A Tc=125
C
IF=30A Tc=25C
IF=30A Tc=125
C
0.88
0.78
1.05
0.95
V
MBR30100PT
Dual High Voltage Schottky Rectifier
HUAKE semiconductors
2017.08
2
/3 编号：HK-WI-TD-004 版本/版次：B/0
Typical Performance Characteristics
Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current
Figure 3. Junction Capacitance Figure 4. Power Derating