BC546,A,B
BC547,A,B,C
BC548,A,B,C
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC546, BC547,
BC548 series devices are silicon NPN small signal
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS: (T
A
=25°C) SYMBOL BC546 BC547 BC548 UNITS
Collector-Base Voltage V
CBO
80 50 30 V
Collector-Emitter Voltage V
CES
80 50 30 V
Collector-Emitter Voltage V
CEO
65 45 30 V
Emitter-Base Voltage V
EBO
6.0 6.0 5.0
V
Continuous Collector Current I
C
100 mA
Peak Collector Current I
CM
200 mA
Peak Base Current I
BM
200 mA
Peak Emitter Current I
EM
200 mA
Power Dissipation P
D
500 mW
Operating and Storage
Junction Temperature T
J
, T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
250 °C/W
Thermal Resistance Θ
JC
150 °C/W
ELECTRICAL CHARACTERISTICS: (T
A
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
V
CB
=30V 15 nA
I
CBO
V
CB
=30V, T
A
=150°C 5.0 μA
V
CE(SAT)
I
C
=10mA, I
B
=0.5mA 250 mV
V
CE(SAT)
I
C
=100mA, I
B
=5.0mA 600 mV
V
BE(SAT)
I
C
=10mA, I
B
=0.5mA 700 mV
V
BE(SAT)
I
C
=100mA, I
B
=5.0mA 900 mV
V
BE(ON)
V
CE
=5.0V, I
C
=2.0mA 580 700 mV
V
BE(ON)
V
CE
=5.0V, I
C
=10mA 770 mV
h
FE
V
CE
=5.0V, I
C
=10μA (BC546,A, BC547,A, BC548,A) 90
h
FE
V
CE
=5.0V, I
C
=10μA (BC546B, BC547B, BC548B) 150
h
FE
V
CE
=5.0V, I
C
=10μA (BC547C, BC548C) 270
h
FE
V
CE
=5.0V, I
C
=2.0mA (BC546) 110 450
h
FE
V
CE
=5.0V, I
C
=2.0mA (BC546A, BC547A, BC548A) 110 220
h
FE
V
CE
=5.0V, I
C
=2.0mA (BC546B, BC547B, BC548B) 200 450
h
FE
V
CE
=5.0V, I
C
=2.0mA (BC547, BC548) 110 800
h
FE
V
CE
=5.0V, I
C
=2.0mA (BC547C, BC548C) 420 800
h
fe
V
CE
=5.0V, I
C
=2.0mA, f=1.0kHz 125 900
f
T
V
CE
=5.0V, I
C
=10mA, f=35MHz 300 MHz
C
ob
V
CB
=10V, I
E
=0, f=1.0MHz 2.5 pF
C
ib
V
EB
=0.5V, I
C
=0, f=1.0MHz 9.0 pF
NF V
CE
=5.0V, I
C
=0.2mA, R
G
=2.0kΩ,
B=200Hz, f=1.0kHz 2.0 10 dB
R1 (13-December 2013)
www.centralsemi.com
