Revers
e Recovery Time (Note 2) t 150 250 450 nS
FFM101 – FFM107
Characteristi
c Symbol
FFM101 – FFM107
4 pF
25 A
W
eight: 0.01 grams (approx.)
Case: SOD-123FL, Molded Plastic
Surge Overload Rating to 25A Peak
Ultra-Fast Recovery Time
Ideally Suited for Automatic Assembly
Low Power Loss
Classification Rating 94V-O
1.3 V
-55 to +150 °
C
35 70 140 280 420 560 800 V
50 100 200 400 600 800 1000 V
Features
!
!
Lo
w Forward Voltage Drop, High Efficiency
!
!
!
!
Plastic Case Material has UL Flammability
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Mechanic
al Data
!
!
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
!
Lead Free: For RoHS / Lead Free Version
Maximum R
atings and Electrical Characteristics
@T
A
=25°
C unless otherwise specified
P
eak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
RM
S Reverse Voltage V
R(RM
S)
Av
erage Rectified Output Current @T
L
= 100°
C I
O
1.0 A
Non-Repet
itive Peak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method)
I
FSM
Forward V
oltage @I
F
=
1.0A V
FM
Pe
ak Reverse Current @T
A
= 25°
C
At Rated DC Blocking Voltage @T
A
= 100
°C
I
RM
2.0
50
µA
T
ypical J unction Capacitance (Note 2) C
j
T
ypi
cal Thermal Resistance (Note 3) R
JL
180 °
C/W
Operat
i
ng and S
torage Temperature Range T
j,
T
STG
Note:
1. M
easured with I
F
= 0.
5A,
I
R
=
1.
0A, I
rr
=
0.
25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse volt age of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land
area.
1 of 2
Glass passivated device
!
!
101
FFM
UNITS
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
1.0A
GLASS PASSIVATED FAST RECOVERY DIODE
102 103 104
105 106 107
rr
FFM FFM
FFM FFM FFM FFM
1.
0
±
0.
2
2.
6
±
0.
2
1.
8±
0.2
C
at
hode Band
Top View
3.
6
±
0.
2
0.
7
±
0.
3
1.
0±
0.15
SOD - 123FL
Dimensions in millimeters
1.0±
0.15

I
, PEAK FORWARD SURGE CURRENT (A)
FSM
0
10
20
30
1 10 100
NUMBER
OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
Pulse
Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
1
10
100
1 10 100
C
, CAPACITANCE (pF)
j
V
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T
=
25°C
f =
1MHz
j
0
0.2
0.4
0.6
0.8
1.0
25
50 75 100 125 150 175 200
I
, AVERAGE FWD RECTIFIED CURRENT (A)
(A
V)
T
, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
A
Single
phase half-wave
60 Hz resistive or inductive load
50V
DC
Approx
50 NI (Non-inductive)Ω
10 NIΩ
1.0
NI
Ω
Oscilloscope
(Note
1)
Pulse
Generator
(Note
2)
Device
Under
Test
t
rr
Settimebasefor5
/10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1.
Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Ω
Ω
Fig.
5 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
0.01
0.1
1.0
10
0.6
0.8 1.0 1.2 1.4
I
, INSTANTANEOUS FWD CURRENT (A)
F
V
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T
= 25°C
j
Pulse
width = 300 µs
2 of 2
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
FFM101 – FFM107
FFM101 – FFM107