1 of 2
1N4001 - 1N4007
1.0A
SILICON RECTIFIER
Features
!
Diffus
ed Junction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Me
chanical Data
C
!
C
ase: Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD- 202, Met hod 208
!
Polarity: Cathode Band
!
Weight: 0.35 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
Maximum R
atings and Electrical Characteristics
@T
A
=2
5°
C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derat e current by 20%.
Characteristic Symbol
1N
4001
1N
4002
1N
4003
1N
4004
1N
4005
1N
4006
1N
4007
Unit
P
eak Repetitive Reverse Voltage
Working Peak Reverse Vol tage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50 100
200 400 600 800 1000 V
RM
S Reverse Voltage V
R(RM
S)
35 70
140 280 420 560 700 V
A
verage Rectified Output Current
(Note 1) @T
A
=
75°C
I
O
1.0 A
Non-Repet
itive Peak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method)
I
FSM
30
A
Forward V
oltage @I
F
= 1
.0A V
FM
1.0 V
Peak
Reverse Current @T
A
= 25°
C
At Rated DC Blocki ng Vol tage @T
A
= 100°
C
I
RM
2.0
50
µA
T
ypical Junction Capacitance (Note 2) C
j
15 pF
T
ypical Thermal Resist ance Juncti on to Ambient
(Note 1)
R
JA
50
K
/W
Operat
ing Temperat ure Range T
j
-55 to +150 °
C
S
torage Temperature Range T
STG
-55 to +150 °
C
*G
lass passivated forms are available upon request
Note:
1. Leads maintained at ambi ent temperat ure at a distanc e of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Vol tage of 4.0V D.C.
1N4001 - 1N4007
!
Le
a
d Free: For RoHS / Lead Free Version
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
DO-41
Dim M
in Max
A
24.5 —
B
4.
06 5.
21
C
0.60 0.
80
D
2.
00 3.
00
All Di
mensions in mm
2 of 2
40 60
80 100 120 140 160 180
0
0.2
0.4
0.6
0.8
1.0
I
, AVERAGE FORWARD RECTIFIED CURRENT (A)
(A
V)
T ,
AMBIENT TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
A
C
, CAPACITANCE (pF)
j
V ,
REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
1.0 10 100
1.0
10
100
T =
25ºC
j
f =
1MHz
1.0 1
0 100
I
, PEAK FORWARD SURGE CURRENT (A)
FS
M
NUMBER
OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
8.3ms S
ingle half sine-wave
JEDEC Method
40
30
20
0
10
50
0.6 0
.8 1.0 1.2 1.4 1.6
0.01
0.1
1.0
I
, INSTANTANEOUS FORWARD CURRENT (A)
F
V ,
INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T =
25ºC
PULSE WIDTH = 300µs
2% DUTY CYCLE
j
10
1N4001 - 1N4007
1N4001 - 1N4007
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com