Ca
se: SMA/DO-214AC SMB/DO-214AA, Molded Plastic
Classification Rating 94V-O
Guard Ring Die Construction
For Use in Low Voltage Application
Surge Overload Rating to 50A Peak
Ideally Suited for Automatic Assembly
SS22L – SS220L
2.0A SU
RFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
Schottk
y Barrier Chip
!
!
Low Power Loss, High Effic ienc y
!
!
!
!
Plastic Case Material has UL Flammability
Mechanical D
ata
!
!
T
erminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
Lead Free: For RoHS / Lead Free Version
Maximum Ra
tings and Electrical Characteristics
@T
A
=25°C
unless otherwise specifi ed
Note: 1. Mounted on P.C. Board with 5.0mm
2
copper pad
area.
1 of 2
SS22L – SS220L
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Dim Min Max
Min Max
A
2.29 2.92 3.30 3.94
B
4.00 4.60 4.06 4.57
C
1.27 1.63 1.96 2.21
D
0.15 0.31 0.15 0.31
E
4.80 5.59 5.00 5.59
G
0.10 0.20 0.10 0.20
H
0.76 1.52 0.76 1.52
J
2.01 2.62 2.00 2.62
All Dimensions in mm
A
B
C
D
G
H
E
J
SMA SMB
We
ight:
!
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Zibo Seno Electronic Engineering Co.,Ltd.
Ty
pical Junction Capacitance
0.45 0.50 0.60 0.82 V
2.0 A
14 21 28 35 42 56 70 105 140 V
20 30 40 50 60 80 100 150 200 V
Peak
Repetitive Reverse Vol tage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
RMS
Reverse Voltage V
R(RMS)
Average
Rectified Output Current @T
L
= 75°C
I
O
Non-Repeti
tive Peak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method)
I
FSM
50 A
Forward V
oltage @I
F
= 2
.0A V
FM
Peak
Reverse Current @T
A
= 25°C
At Rated DC Blocki ng Voltage @T
A
= 100°C
I
RM
0.05
10
mA
R
JL
R
JA
28
88
°C/W
Operat
i
ng
T
e
m
perature Range T
j
-55 t
o +150 °
C
S
t
orage
Temperature Range T
STG
-55 t
o +150 °
C
Ty
pical Thermal Resis tance (Note 1)
j
C
28
pF
C
haracteristic Symbol SS22L SS23L SS24L SS25L SS26L SS28L SS210L SS215L SS220L Unit
0.1
10
SS22L – SS220L
SS22L – SS220L
10
100
1000
0.1 1
10 100
C, JUNCTION CAPACIT
ANCE (pF)
j
V , REVERSE VOL
TAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25°C
f
= 1 MHz
j
0
20
40
60
80
100 120
140
I ,
INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RA
TED PEAK REVERSE VOLTAGE (%)
Fi
g
. 5 T
ypical Reverse Characteristics
T = 100ºC
j
T = 75ºC
j
T = 25ºC
j
100
10
1.0
0.1
0.01
0.001
0
1.0
2.0
25 50 75
100 125 150
I AVERAGE FORW
ARD CURRENT (A)
(AV),
T, LEAD TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
L
2 of 2
0
10
20
30
40
50
1
10 100
I , PEAK
FORWARD SURGE CURRENT (A)
FSM
NUMBER
OF
CYCLES
A
T
60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half-Sine-Wave
(JEDEC
Method)
T =
100 C
j
°
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Zibo Seno Electronic Engineering Co.,Ltd.
I
, INST
A
NT
ANEOUS FORWARD CURRENT (A)
F
V , INST
ANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
F
0.1
1.0
10
0 0.2 0.4
0.6 0.8 1.0
SS22L - SS24L
T - 25º
C
J
I
Pu
l
se Wi
d
th = 300 s
F
µ
SS25L-SS26L
SS28L-SS210L
SS215L - SS220L