1.0A
SURFACE MOUNT SCHOTTKY BARRIER DIODE
T
ypical Junction Capacitance
0.45 0.50 0.60 0.82 V
1.0 A
14 21 28 35 42 56 70 105 140 V
20 30 40 50 60 80 100 150 200 V
SS12L – SS120L
Features
!
Sc
hottky Barrier Chip
!
Ideally Suited for Automatic Assembly B
!
Low Power Loss, High Eff icienc y
!
!
For Use in Low Voltage Application A
!
Guard Ring Die Construction F
!
Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanic
al Data
!
C
ase: SMA/DO-214AC, Molded Plastic
!
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
Weight: 0.064 grams (approx.)
!
Lead Free: For RoHS / Lead Free Version
Maximum R
atings and Electrical Characteristics
@T
A
=25°
C unless otherwise specified
P
eak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
RM
S Reverse Voltage V
R(RM
S)
Av
erage Rectified Output Current @T
L
= 75°
C I
O
Non-Repet
itive Peak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method)
I
FSM
30 A
Forward V
oltage @I
F
= 1
.0A V
FM
Peak
Reverse Current @T
A
= 25°
C
At Rated DC Blocki ng Voltage @T
A
= 100°
C
I
RM
0.05
10
mA
R
JL
R
JA
28
88
°C/
W
Operat
i
ng
T
e
m
perature Range T
j
-55 t
o +150 °
C
S
t
orage
T
e
mperature Range T
STG
-55 t
o +150 °
C
Note:
1. Mounted on P.C. Board with 5.0mm
2
copper pad
area.
SM
A/DO-214AC
Dim
Min Max
A
2.50
2.90
B
4.00
4.60
C
1.20
1.60
D
0.152
0.305
E
4.
80 5.
28
F
2.00
2.44
G
0.
051 0.
203
H
0.76
1.52
All D
imensions in mm
1 of 2
SS12L – SS120L
S
u
rge Overload Rating to 30A Peak D
T
ypical Thermal Resistance (Note 1)
j
C
28
pF
Ch
aracteristic Symbol SS12L SS13L SS14L SS15L SS16L SS18L SS110L SS115L SS120L Unit
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Zibo Seno Electronic Engineering Co.,Ltd.
0.1
10
SS12L – SS120L
SS12L – SS120L
0.01
0.1
1.0
10
0
0.4 0.8 1.2
I
,
INST
A
NTANEOUS FORWARD CURRENT (A)
F
V ,
INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
F
SS12L - SS14L
SS15L - SS16L
T -
25ºC
j
I P
ulse Width = 300 s
F
µ
10
100
1000
0.1 1
10 100
C, JUNCTION CAPACIT
ANCE (pF)
j
V , REVERSE
VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T =
25°C
f = 1 MHz
j
0
20
40
60
80
100 120
140
I ,
INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF
RATED PEAK REVERSE VOLTAGE (%)
Fi
g
. 5
Typical Reverse Characteristics
T = 10
0ºC
j
T = 75
ºC
j
T = 25
ºC
j
100
10
1.0
0.1
0.01
0.001
0
1.0
25 50
75 100 125 150
I AVERAGE FORW
ARD CURRENT (A)
(AV),
T, LEAD TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
L
SS
18L - SS110L
2 of 2
0
10
20
30
40
50
1
10 100
I ,
PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF
CYCLES
A
T
60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half-Sine-W
ave
(JEDEC Method)
T =
100 C
j
°
SS115-SS120L
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Zibo Seno Electronic Engineering Co.,Ltd.