3N60
Pin Assign
ment
Ordering Number
Power MO
SFET
1.Ga
te
3.Source
2.Drain
ORDERING INFORMATION
Package
1 2
3
T
O
-220
G D
S
ITO-220/TO-220F
G D
S
G D
S
G D
S
Note: Pin Assignment: G:
Gate D:
Drain S:
Source
3N65
3N60 3N65
Z ibo Seno Electronic Engineering Co., Ltd.
3N60 3N65
1
TO-220
1
1
1
TO-251/IPAK TO-252/DPAK
TO-251/IPAK
TO-252/DPAK
DESCRIPTION
3N60 3N65 is a high voltage and high current power
MO
SFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* R
DS(ON)
= 3.6Ω @V
GS
= 10 V
* Ultra low
gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( C
RSS
= ty
pical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ITO-220/TO-220F
1 of 6
www.senocn.com
Part No.
Package
Packing
3N60-TU
TO-251 75pcs / Tube
3N60-TR
TO-252 2.5Kpcs / 13” Reel
3N60-TU
TO-220 50pcs / Tube
3N60-TU
ITO-220/TO-220F 50pcs / Tube
3N60-TU
TO-252
75pcs / Tube
3N60-TU
TO-262 50pcs / Tube
3N60-TU
TO-263
3N60-TR
TO-263 800pcs / 13" Reel
50
pcs / Tube
3
600/650
Volts
N-CHANNEL POWER MOSFET
Amps,
Power M
OSFET
3N60 3N65
2 of 7
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
3N60 3N65
50 W
34 W
ABSOLUTE MAXIMUM RATINGS (
T
C
= 25°С, unless other wise specifie
d)
PARAMETER SYMBOL RATI
NGS UNIT
Drain-Source Voltage V
DSS
650 V
Gate-Source Voltage V
GSS
±30 V
Avalanche Current (Note 2) I
AR
3.0 A
Continuous I
D
3.0 A
Drain Current
Pulsed (Note 2) I
DM
12 A
Single Pulsed (Note 3) E
AS
200 mJ
Avalanche
Energy
Repetitive (Note 2) E
AR
7.5 mJ
Peak Diode Recovery
dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220 75 W
Power Dissi
pation
P
D
(T
C
= 25°С)
Junction Temperature T
J
+150 °С
Ambient Operating Te
mperature T
OPR
-55 ~ +150 °С
Storage Temperature T
ST
G
-55 ~ +150 °С
Notes: 1. Absolute ma
ximum ratings are those values
beyond w
hich the device coul d be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device op eration is not implied.
2. Repetitive Rating : Pulse
width limited by T
J
3. L=64mH, I
AS
=3.0A, V
DD
=50V, R
G
=25 Ω, Starting T
J
= 25°C
4. I
SD
≤3.0A, di/dt≤200A/μs, V
DD
≤ BV
DS
S
, Starting T
J
= 25°C
THERMAL DATA
3N60
3N65
600 V
TO-220F
TO-251/IPAK
TO-252/DPAK
2.50
110
PARAMETER
SYMBOL RATINGS UNIT
TO-220 62.5
TO
-220F 62.5
Junction
-to-Ambient
θ
JA
℃/W
TO
-220 1.67
TO-220F 3.68
Junction
-to-Case
θ
Jc
℃/W
110
TO-251/IPAK
TO-252/DPAK
TO-251/IPAK
TO-252/DPAK
2.50
50 W