= 10 V
= 10 V
Power M
OSFET
1.
Gate
3.Source
2.Drain
ORDERING
INFORMATION
7N60 7N65
1 of 7
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
7N60 7N65
1
TO-220
1
7.0 Amps, 600/650
Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
7N65 is a high volt
age MOSF
ET and is designed to
have better characteristics,
such as fast
switching time, low gate
charge
, lo
w on-state resistance and have a high rugged avalanche
ch
ar
a
cteristics. This power MOSFET is usually used at high speed
sw
itc
hing applications in switching power supplies and adaptors.
FEATURES
* R
DS(ON)
= 1.0Ω @V
GS
R
DS(ON)
= 1.2Ω @V
GS
* Ultra Lo
w
Gate Charge (Typical 29 nC )
* Lo
w
Reverse Transfer Capacitance ( C
RSS
= ty
pi
cal 16pF )
* F
ast
S
witching Capability
* Avala
n
che Energy Tested
* Improved dv/dt
Capa
bility, High Ruggedness
SY
MBOL
1
1
TO-262/I PAK
2
TO-263/D PAK
2
7N60
ITO-220/TO-220F
TO-263/D PAK
TO-262/I PAK
7N60
Pin Assig
n
men
t
Ordering N
um
ber
Package
1 2
3
T
O
-220
G D
S
G D
S
G D
S
G D
S
Note: Pin
Assignment:
G:
Ga
te D:
Drain
S:
Source
7N65
2
2
1
1
TO-251/IPAK TO-252/DPAK
Part No.
Package
Packing
7N6* -TU
TO-251 75pcs / Tube
7N6* -TR
TO-252 2.5Kpcs / 13” Reel
7N6* -TU
TO-220 50pcs / Tube
7N6* -TU
ITO-220 50pcs / Tube
7N6* -TU
TO-252
75pcs / Tube
7N6* -TU
TO-262 50pcs / Tube
7N6* -TU
TO-263
5
0pcs / Tube
7N6* -TR
TO-263 800pcs / 13" Reel
G D
S
G D
S
TO-251/IPAK
TO-252/DPAK
A
Power M
OSFET
7N60 7N65
2 of 7
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
7N60 7N65
142
48 W
ABSOLUTE MAXI
MUM RATINGS
(
T
C
=
25°
С, unless other
wise specified)
PARAMET
ER SYMBOL RATINGS UNIT
Drain-S
ource Voltage
V
DSS
650 V
Gate-Source V
oltage V
GSS
±30
V
Avala
nche Current (Note 2) I
AR
7.0
A
Contin
uous I
D
7.0
A
Drain C
urrent
Pulse
d (Note 2) I
DM
Singl
e Pulsed (Note 3) E
AS
530
Ava
lanche Energy
Repetitiv
e (Note 2) E
AR
Peak Di
ode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
T
O-220 142 W
Po
wer Dissipation
P
D
(T
C
=
25°
С)
Junctio
n Temperature T
J
+
150 °
С
Ambient Oper
ating Temperatu r e T
OPR
-55 ~
+150 °
С
Storage Temperature T
ST
G
-55 ~ +150 °С
Notes:
1. Absolute maximum ratings are those values
beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited b y T
J
3.
L=64mH, I
AS
=7
.0A, V
DD
=
50V, R
G
=
25
Ω, Starting T
J
= 25°C
4. I
SD
≤7.0A, di/dt≤200A/μs, V
DD
≤ BV
DS
S
, Starting T
J
= 25°C
TH
ERMAL DATA
7N60
7N65
600 V
T
O-220F
TO-262/I PAK
2
TO-263/D PAK
2
29.6
mJ
14.2
mJ
W
142
W
PARAMET
ER SYMBOL RATING UNIT
Junctio
n to Ambient
TO-220/ITO-220/TO-220F
TO-262/TO-263
θ
JA
62.5
°C/W
TO-251/ TO-252
160
Junction
to Case
TO-220/TO-262/TO-263
θ
JC
1.25
°C/W
ITO-220/TO-220F
3.5
TO-251/ TO-252
2.5